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Qiang Guo

Researcher at Harbin Institute of Technology

Publications -  5
Citations -  56

Qiang Guo is an academic researcher from Harbin Institute of Technology. The author has contributed to research in topics: Vickers hardness test & Shear strength. The author has an hindex of 3, co-authored 5 publications receiving 38 citations.

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Journal ArticleDOI

Ag@Sn Core‐Shell Powder Preform with a High Re‐Melting Temperature for High‐Temperature Power Devices Packaging

TL;DR: In this article, the authors proposed a highly conductive die attach material based on Ag@Sn powder for power devices operating at high temperatures or in other harsh environments, which can sustain high temperatures up to 400°C with a high shear strength due to the high remelting temperature of the formed Ag3Sn.
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Microstructure evolution and mechanical strength evaluation in Ag/Sn/Cu TLP bonding interconnection during aging test

TL;DR: Results show that the substitution of Cu for one side of Ag plates in traditional Ag-Sn TLP joint did not influence its strength and fracture mode, and the fracture surfaces of the aged Ag/Sn/Cu TLP bonding interconnections after shearing test were characterized in detail.
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Microstructure evolution during reflow and thermal aging in a Ag@Sn TLP bondline for high-temperature power devices

TL;DR: In this article, the microstructure evolution and the resulting change in mechanical properties in a Ag@Sn TLP bondline during reflow and thermal aging were investigated and a high-remelting-point bondline was rapidly achieved with thermocompression bonding of Ag@sn powder in only 5min at 250°C.
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Solderless bonding with nanoporous copper as interlayer for high-temperature applications

TL;DR: It is demonstrated that the NPC sheets can be used to achieve the Cu Cu interconnection, which is a potential bonding technology for power devices operating at high temperature.
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A low temperature die attach technique for high temperature applications based on indium infiltrating micro-porous Ag sheet

TL;DR: A low-temperature die attach method based on In infiltrating micro-porous Ag sheet was proposed for high temperature power electronic applications in this paper, where the bonding temperature was decreased down to 180°C, reducing the thermal stress caused by coefficient of thermal expansion (CTE) mismatch between die and direct bonded copper (DBC).