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Qimeng Jiang

Other affiliations: Huawei, Zhejiang University
Bio: Qimeng Jiang is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Passivation & Gallium nitride. The author has an hindex of 22, co-authored 44 publications receiving 1611 citations. Previous affiliations of Qimeng Jiang include Huawei & Zhejiang University.

Papers published on a yearly basis

Papers
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Journal ArticleDOI
TL;DR: In this paper, a 600-V normally-off SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported.
Abstract: In this letter, 600-V normally-OFF SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported. Normally-OFF operation and low OFF-state gate leakage are obtained by using fluorine plasma ion implantation in conjunction with the adoption of a 17-nm SiNx thin film grown by plasma-enhanced chemical vapor deposition as the gate insulator. The normally-OFF MIS-HEMT exhibits a threshold voltage of +3.6 V, a drive current of 430 mA/mm at a gate bias of 14 V, a specific ON-resistance of 2.1 mΩ·cm2 and an OFF-state breakdown voltage of 604 V at a drain leakage current of 1 μA/mm with VGS=0 V, and the substrate grounded. Effective current collapse suppression is obtained by AlN/SiNx passivation as proved by high-speed pulsed I-V and low-speed high-voltage switching measurement results.

220 citations

Journal ArticleDOI
TL;DR: In this paper, an effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) was presented, which features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD).
Abstract: An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented. This technique features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD). With in situ remote plasma pretreatments prior to the AlN deposition, an atomically sharp interface between ALD-AlN and III-nitride has been obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN-passivated AlGaN/GaN HEMTs under high-drain-bias switching conditions.

215 citations

Journal ArticleDOI
TL;DR: In this article, the vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage (I-V) measurements.
Abstract: Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent current-voltage ( I-V) measurements. It is found that the top-to-substrate vertical breakdown voltage (BV) is dominated by the space-charge-limited current conduction involving both acceptor and donor traps in the GaN buffer/transition layer. From the temperature-dependent transient backgating measurements, the acceptor level at EV + 543 meV and the donor level at EC-616 meV were identified.

173 citations

Journal ArticleDOI
TL;DR: In this paper, the physical mechanism of passivation of AlGaN/GaN HEMTs by AlN thin film prepared with plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni- Al2O3/AlN-GaN-AlN/AlGaN /GaN metal-insulator-semiconductor (MIS) diodes.
Abstract: The physical mechanism of passivation of AlGaN/GaN HEMTs by AlN thin film prepared with plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni- Al2O3/AlN-GaN/AlGaN/GaN metal-insulator-semiconductor (MIS) diodes. The dielectric stack Al2O3/AlN (13/2 nm) exhibits similar capability in suppressing the current collapse in AlGaN/GaN HEMTs as the 4-nm PEALD-AlN thin film used in our previous work but delivers much lower vertical leakage to facilitate the capacitance-voltage characterizations. Exceptionally large negative bias (<; -8 V) is required to deplete the 2-D electron gas in the MIS diode's C-V measurement. By virtue of quasi-static C-V characterization, it is revealed that positive fixed charges of ~ 3.2 × 1013 e/cm2 are introduced by the PEALD-AlN. The positive fixed charges are suggested to be polarization charges in the monocrystal-like PEALD-AlN. They can effectively compensate the high-density slow-response acceptor-like interface traps, resulting in effective suppression of current collapse.

108 citations

Journal ArticleDOI
TL;DR: In this article, a monocrystalline AlN interfacial layer is inserted between the amorphous Al�Ω 2�O� 3cffff gate dielectric and the GaN channel to prevent the formation of detrimental Ga-O bonds.
Abstract: We report a high-performance normally-off Al 2 O 3 /AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al 2 O 3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC-HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm 2 /V·s, a high on/off drain current ratio of ~10 10 , and low dynamic on-resistance degradation.

101 citations


Cited by
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Journal ArticleDOI
01 Jan 1977-Nature
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

1,560 citations

Journal ArticleDOI
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

922 citations

Journal ArticleDOI
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Abstract: Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

788 citations

Journal ArticleDOI
TL;DR: In this paper, a 600-V normally-off SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported.
Abstract: In this letter, 600-V normally-OFF SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported. Normally-OFF operation and low OFF-state gate leakage are obtained by using fluorine plasma ion implantation in conjunction with the adoption of a 17-nm SiNx thin film grown by plasma-enhanced chemical vapor deposition as the gate insulator. The normally-OFF MIS-HEMT exhibits a threshold voltage of +3.6 V, a drive current of 430 mA/mm at a gate bias of 14 V, a specific ON-resistance of 2.1 mΩ·cm2 and an OFF-state breakdown voltage of 604 V at a drain leakage current of 1 μA/mm with VGS=0 V, and the substrate grounded. Effective current collapse suppression is obtained by AlN/SiNx passivation as proved by high-speed pulsed I-V and low-speed high-voltage switching measurement results.

220 citations