R. Bhattacharya

Bio: R. Bhattacharya is an academic researcher from University of Calcutta. The author has contributed to research in topics: Positronium & Positron. The author has an hindex of 3, co-authored 4 publications receiving 59 citations.

Study of transition metal ion doped mullite by positron annihilation techniques

Abstract: Mullite, an extremely useful ceramic material, is doped with transition metal ions. The changes in the electronic properties of these doped materials have been studied by positron annihilation lifetime spectroscopy as well as Doppler broadened line shape analysis. The results on the positron annihilation parameters are characteristic of ionic size, oxidation state and the “d”-electron configuration of the respective transition metals doped in the parent lattice of the mullite. These results, along with the resistivity measurements are suggestive of transition of the parent mullite from an insulator to a semimetal in the modified structure.

Alpha irradiated YNi2B2C studied from positron lifetime measurements

Abstract: For YNi2B2C, a typical borocarbide superconductor, we have carried out positron annihilation lifetime measurements, before and after a 40 MeV α-irradiation to a fluence of 2X1016 particles/cm2. A 3-lifetime fit, giving improved variance, showed a third lifetime longer than 1 ns and of low (1 to 2%) intensity. This lifetime is due to positronium formation and o-Ps to p-Ps conversion in the porous samples. The irradiation increases the bulk lifetime. τB, calculated from τ1 and τ2, from 181 ps to 213 ps.

Mullite: Crystal Structure and Related Properties

Abstract: Mullite is certainly one of the most important oxide materials for both conventional and advanced ceramics. Mullite belongs to the compositional series of orthorhombic aluminosilicates with the general composition Al2(Al2+2xSi2-2x)O10-x. Main members are sillimanite (x = 0), stoichiometric 3/2-mullite (x = 0.25), 2/1-mullite (x = 0.40), and the SiO2-free phase ι-alumina (x = 1, crystal structure not known). This study gives an overview on the present state of research regarding single crystal mullite. Following a short introduction, the second part of the review focuses on the crystal structure of mullite. In particular, the characteristic mullite-type structural backbone of parallel chains consisting of edge-sharing MO6 octahedra and their specific cross-linkage by TO4 tetrahedra is explained in detail, the role of cation disorder and structural oxygen vacancies is addressed, and the possibility of cation substitution on different sites is discussed. The third part of the study deals with physical properties being relevant for technical applications of mullite and includes mechanical properties (e.g., elasticity, compressibility, strength, toughness, creep), thermal properties (e.g., thermal expansion, heat capacity, atomic diffusion, thermal conductivity), electrical conductivity, and optical properties. Special emphasis is put on structure–property relationships which allow for interpretation of corresponding experimental data and offer in turn the possibility to tailor new mullite materials with improved properties. Finally, the reported anomalies and discontinuities in the evolution of certain physical properties with temperature are summarized and critically discussed.

Defects and the optical absorption in nanocrystalline ZnO

Abstract: The correlation between the structural and optical properties of mechanically milled high purity ZnO powder is reported in the present work. Reduction of average grain size and enhancement of strain as a result of milling have been estimated from the broadening of x-ray powder diffraction patterns. After milling, the optical bandgap, revealed from absorption spectroscopy, has been red-shifted and the width of the localized states, calculated from the analysis of the Urbach tail below the absorption edge, has been extended more and more into the bandgap. Moreover, the band tailing parameter is seen to vary exponentially with the inverse of the grain size. Finally, the positron annihilation technique has been employed to identify the nature of defects present (or generated due to milling) in the system and thereby to correlate the defect mediated modification of optical absorption in ZnO.

Defect dynamics in annealed ZnO by positron annihilation spectroscopy

Abstract: As-supplied polycrystalline ZnO samples (purity 99.9% from Sigma-Aldrich, Germany) have been annealed at different temperatures and subsequently characterized by positron annihilation spectroscopy, x-ray-diffraction (XRD) analysis, thermogravimetric analysis (TGA), and resistivity measurements. Positron annihilation lifetime analysis and coincidence Doppler-broadened electron-positron annihilation γ-radiation (CDBEPAR) line-shape measurements have been employed at a time to identify the nature of defects in differently annealed ZnO materials. Annealing up to 300°C, an increase of defect lifetime (τ2) as well as shape parameter (S parameter) has been observed. Further annealing causes a large decrease of τ2 and S parameter. TGA study shows considerable mass loss from ZnO as the annealing temperature is increased above 300°C. This is possibly due to oxygen evaporation from the sample. The c-axis lattice parameter, extracted from the XRD spectra, shows an increase due to annealing above 600°C, which is a sig...

The effect of order–disorder phase transitions and band gap evolution on the thermoelectric properties of AgCuS nanocrystals

Abstract: Copper and silver based chalcogenides, chalco-halides, and halides form a unique class of semiconductors, as they display mixed ionic and electronic conduction in their superionic phase. These compounds are composed of softly coupled cationic and anionic substructures, and undergo a transition to a superionic phase displaying changes in the substructure of their mobile ions with varying temperature. Here, we demonstrate a facile, ambient and capping agent free solution based synthesis of AgCuS nanocrystals and their temperature dependent (300–550 K) thermoelectric properties. AgCuS is known to show fascinating p–n–p type conduction switching in its bulk polycrystalline form. Temperature dependent synchrotron powder X-ray diffraction, heat capacity and Raman spectroscopy measurements indicate the observation of two superionic phase transitions, from a room temperature ordered orthorhombic (β) to a partially disordered hexagonal (α) phase at ∼365 K and from the hexagonal (α) to a fully disordered cubic (δ) phase at ∼439 K, in nanocrystalline AgCuS. The size reduction to the nanoscale resulted in a large variation in the thermoelectric properties compared to its bulk counterpart. Temperature dependent Seebeck coefficient measurements indicate that the nanocrystalline AgCuS does not display the p–n–p type conduction switching property like its bulk form, but remains p-type throughout the measured temperature range due to the presence of excess localized Ag vacancies. Nanocrystalline AgCuS exhibits a wider electronic band gap (∼1.2 eV) compared to that of the bulk AgCuS (∼0.9 eV), which is not sufficient to close the band gap to form a semimetallic intermediate state during the orthorhombic to hexagonal superionic phase transition, thus AgCuS nanocrystals do not show conduction type switching properties like their bulk counterpart. The present study demonstrates that ambient solution phase synthesis and size reduction to the nanoscale can tailor the order–disorder phase transition, the band gap and the electronic conduction properties in superionic compounds, which will not only enrich solid-state inorganic chemistry but also open a new avenue to design multifunctional materials.