R.C. Frye

Bio: R.C. Frye is an academic researcher. The author has contributed to research in topics: MESFET. The author has an hindex of 1, co-authored 1 publications receiving 91 citations.

A device model for an ion-implanted MESFET

Abstract: A model is developed for an ion-implanted MESFET device in terms of the range and straggle parameters of the Gaussian profile. Reasonable approximations are introduced to obtain a closed-form solution for the linear and triode regions of operation. Simplified square-law approximations are obtained under certain conditions and the validity of these forms is discussed. The simplified expressions are compared with those of the MOSFET and parallels are drawn. Data are presented to confirm the dc results of the theory over a wide range of implant parameters and demonstrate the value of the model for computer-aided design applications.

A comparison of semiconductor devices for high-speed logic

Abstract: The bipolar transistor and FET are compared, considering both today's most advanced implementations and "ultimate" scaled-down devices. The differences between the devices are quantified in terms of transconductance and intrinsic speed. Old limits are re-examined and ways of extending the devices toward their ultimate in performance are proposed. While the major emphasis is on silicon, a comparison is made with the GaAs MESFET. Other semiconductor devices are discussed in the context of "bipolar-like" and "FET-like" devices, and the HEMT is considered a very promising candidate for high-speed logic. While Josephson junction logic is not discussed at length, it is a continual point of reference. In addition to comparing devices, the on-chip wiring environment is discussed, especially concerning its impact on power-delay products.

Analysis of GaAs FET's for integrated logic

Abstract: This paper presents an analysis of the speed and power dissipation of various GaAs FET inverter circuits as prototypes of integrated logic circuit design. The analysis provides analytical expressions to assess the switching performance of enhancement-mode and depletion-mode MESFET's and JFET's with respect to switching-speed and power-dissipation capabilities in optimized configurations. Various load elements are described and analyzed for circuit applications. The various logic gates, now under development, are compared in their switching performance and a review of the state of the art is given. Prospects of large-scale integration (LSI) of gigabit logic for GaAs FET's are assessed.

Analytical models of ion-implanted GaAs FET's

Abstract: This paper describes analytical models for the calculation of the current-voltage characteristics of ion-implanted GaAs FET's. The models, which take into account backgating, capping, the source and drain series resistances, and the output conductance, provide simple analytical expressions for the current-voltage characteristics and are quite suitable for the parameter acquisition and computer-aided design of GaAs FET's and IC's. In particular, the effective implanted charge and, hence, the activation efficiency may be deduced from the measured pinchoff voltage. The theory may be also used for optimization of doping profiles of GaAs FET's. The results of the calculation are in good agreement with experimental data.

High-temperature electrical characteristics of GaAs MESFETs (25-400 degrees C)

Abstract: The effects of elevated ambient and substrate temperatures (25 degrees C up to 400 degrees C) on the electrical characteristics of integrated GaAs MESFETs in a state-of-the-art commercial technology are reported. The focus is on the large- and small-signal parameters of the transistors. The existence of zero-temperature-coefficient drain currents is demonstrated analytically and experimentally for enhancement- and for depletion-mode GaAs MESFETs. The data show that, while GaAs MESFETs generally display degradation mechanisms similar to those of silicon MOSFETs with increasing temperature, they incur several additional effects, prominent among which are increased gate leakage currents, lowered Schottky-barrier height, decreased large- and small-signal (gate) input resistances, decreased sensitivity to sidegating and backgating up to approximately 200 degrees C, and increased small-signal drain resistance. >

Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET

Abstract: The effects of optical radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET are studied analytically in the below-pinchoff region. Results show that optical radiation significantly enhances the drain-source current of the GaAs MESFET when only electron-hole pair generation is considered. However, the surface recombination, which in turn results in a gate leakage current, reduces the drain-source current, with the reduction depending on the density of trap centers. The threshold voltage is found to decrease under the normally OFF condition and increase under the normally ON condition due to photogenerated carriers. The surface recombination reverses the effect, i.e. threshold voltage increases under the normally OFF condition and decreases under the normally ON condition, with an increase in the trap center density at a particular ion dose compared to those cases where the effect of recombination is not considered. >