Author
R. Charlton
Bio: R. Charlton is an academic researcher. The author has contributed to research in topics: Equivalent circuit & IMPATT diode. The author has an hindex of 1, co-authored 3 publications receiving 6 citations.
Papers
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TL;DR: In this paper, a convenient laboratory technique was described to measure the internal circuit loss, the load conductance, and equivalent circuit susceptances of microwave diode oscillators and amplifiers using an IMPATT diode biased just below its breakdown voltage.
Abstract: A convenient laboratory technique is described to measure the internal circuit loss, the load conductance, and equivalent circuit susceptances of microwave diode oscillators and amplifiers using an IMPATT diode biased just below its breakdown voltage.
5 citations
01 Oct 1974
TL;DR: In this paper, a convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator, which does not require any mechanical disturbance of the diode in contrast to many network analyser techniques.
Abstract: A convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator. The diode is biased just below its breakdown voltage and is used as a resonant reflection absorber. From these frequency dependent characteristics we are able to separate the load and internal circuit loss conductances providing that the circuit is singly resonant. The experimental technique does not require any mechanical disturbance of the diode in contrast to many network analyser techniques. It also allows a rapid and simple confirmation that the circuit is singly resonant.
1 citations
TL;DR: In this article, it is shown that even though the resonant absorption may be fairly narrow, and its variation with diode bias smooth, this does not guarantee that the circuit is single tuned, that it does not, for example, require a further series reactance giving a broad resonance elsewhere, or that the components of the equivalent circuit are not themselves functions of frequency.
Abstract: In the above short paper, the method described for the characterization of IMPATT's and their circuits is based entirely upon an assumption that the whole oscillator can be correctly described by a single-resonant circuit. This the authors have been careful to emphasize. But it is by no means clear that such an assumption is tenable for any normal circuit configurations, nor that the test described to confirm the given equivalent circuit is sufficiently stringent. Though the resonant absorption may be fairly narrow, and its variation with diode bias smooth, this is no guarantee that the circuit is single tuned, that it does not, for example, require a further series reactance giving a broad resonance elsewhere, or that the components of the equivalent circuit are not themselves functions of frequency.
Cited by
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TL;DR: In this paper, an experimental and theoretical investigation has been conducted into the frequency stability, with respect to temperature, bias voltage, and microwave power variation, of transferred-electron amplifiers with various doping profiles.
Abstract: An experimental and theoretical investigation has been conducted into the frequency stability, with respect to temperature, bias voltage, and microwave power variation, of transferred-electron amplifiers with various doping profiles. Devices with a cathode doping-notch which is large enough to cause a flat electric-field distribution at the working point show the best frequency stability. This behavior is associated with the predominance of a frequency-independent negative-conductor behavior in this type of device.
5 citations
TL;DR: In this article, a matching condition is derived for a transmission cavity stabilized microwave oscillator, which takes account for the power loss in the diode mounting structure. And the effectiveness of the design procedure is finally demonstrated by applying it to a Gunn oscillator realization: at 15 GHz a loaded Q-factor of 6500 could be achieved at the sacrifice of only 2.4dB overall power loss.
Abstract: A matching condition is derived for a transmission cavity stabilized microwave oscillator, which takes account for the power loss in the diode mounting structure. In addition, the power dissipated in the damping resistor--which is commonly used in order to eliminate mode jumping problems--is minimized, thus leading to a useful improvement in both output power and loaded Q-factor of the compound oscillator structure. The effectiveness of the design procedure is finally demonstrated by applying it to a Gunn oscillator realization: at 15 GHz a loaded Q-factor of 6500 could be achieved at the sacrifice of only 2.4-dB overall power loss.
3 citations
01 Oct 1976
TL;DR: In this paper, the diode is used both as a tuning capacitance and as a demodulator for the high frequency current flowing through it to measure the impedance of a millimeter IMPATT circuit by using a modulated microwave signal source.
Abstract: We propose to measure the impedance of a millimeter IMPATT circuit by using a modulated microwave signal source -or a signal with two frequency components. The diode is biased below its breakdown voltage, and it is used both as a tuning capacitance and as a demodulator for the high frequency current flowing through it. This method enables to measure the circuit impedance and losses without dismounting the diode. It is capable of wideband operation even with frequency selective circuits.
2 citations
01 Oct 1974
TL;DR: In this paper, a convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator, which does not require any mechanical disturbance of the diode in contrast to many network analyser techniques.
Abstract: A convenient technique is described to measure the internal circuit loss, the load conductance and equivalent circuit susceptances of an IMPATT oscillator. The diode is biased just below its breakdown voltage and is used as a resonant reflection absorber. From these frequency dependent characteristics we are able to separate the load and internal circuit loss conductances providing that the circuit is singly resonant. The experimental technique does not require any mechanical disturbance of the diode in contrast to many network analyser techniques. It also allows a rapid and simple confirmation that the circuit is singly resonant.
1 citations
TL;DR: In this article, it is shown that even though the resonant absorption may be fairly narrow, and its variation with diode bias smooth, this does not guarantee that the circuit is single tuned, that it does not, for example, require a further series reactance giving a broad resonance elsewhere, or that the components of the equivalent circuit are not themselves functions of frequency.
Abstract: In the above short paper, the method described for the characterization of IMPATT's and their circuits is based entirely upon an assumption that the whole oscillator can be correctly described by a single-resonant circuit. This the authors have been careful to emphasize. But it is by no means clear that such an assumption is tenable for any normal circuit configurations, nor that the test described to confirm the given equivalent circuit is sufficiently stringent. Though the resonant absorption may be fairly narrow, and its variation with diode bias smooth, this is no guarantee that the circuit is single tuned, that it does not, for example, require a further series reactance giving a broad resonance elsewhere, or that the components of the equivalent circuit are not themselves functions of frequency.