R. Chen

Bio: R. Chen is an academic researcher from Stanford University. The author has contributed to research in topics: CMOS & Photodetector. The author has an hindex of 7, co-authored 18 publications receiving 215 citations.

Receiver-less optical clock injection for clock distribution networks

Abstract: We present a new technique of injecting clocks optically onto CMOS chips without the use of a receiver amplifier. We discuss the benefits of such a direct approach and present proof-of-principle experiments of the technique. We analytically compare a receiver-less optical clock distribution and an electrical clock distribution in a fan-out-of-four clock tree to evaluate the timing and power benefits of the optical approach for present microprocessors. We also compare receiver-less direct injection of optical clocks to trans-impedance receiver based injection within the same distribution framework.

MINVDD testing for weak CMOS ICs

Abstract: A weak chip is one that contains flaws-defects that do not interfere with correct circuit operation at normal conditions but may cause intermittent or early-life failures. MINVDD testing can detect weak CMOS chips. The minvdd of a chip is the minimum supply voltage value at which a chip can function correctly. It can be used to differentiate between good chips and weak chips. In the first part of this paper, we will study several types of flaws to demonstrate the effectiveness of MINVDD testing. Experimental results show that MINVDD testing is as effective as VLV testing for screening out burn-in rejects. In the second part of this paper, we propose test conditions for low voltage testing, including test voltage, test timing and test sets. Experimental results are presented to validate our proposal.

MSM-based integrated CMOS wavelength-tunable optical receiver

Abstract: We demonstrate a novel GaAs-metal-semiconductor-metal (MSM)-based wavelength-selective photodetector integrated with its complementary metal-oxide-semiconductor (CMOS) driver and receiver. This receiver has /spl sim/1-ns wavelength switching access time and has been shown to detect 4 bits of 460-Mb/s (2.17-ns bit period) emulated data in nonreturn-to-zero format during the enabled 8.68-ns windows. The demonstrated channel spacing is /spl sim/70.8 GHz. To our knowledge, this is the fastest reported wavelength switching time for a tunable optical receiver.

Fabrication and Analysis of Epitaxially Grown Ge $_{1-x}$ Sn $_x$ Microdisk Resonator With 20-nm Free-Spectral Range

Abstract: In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge1-xSnx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.

Novel electrically controlled rapidly wavelength selective photodetection using MSMs

Abstract: A novel electrically controlled tunable metal-semiconductor-metal (MSM) photodetector is introduced and experimentally demonstrated with 2.5-ns wavelength-switching access time on a GaAs chip for switching between two wavelengths. This detector has a demonstrated 20.1-dB ON/OFF contrast ratio between the selected and the rejected wavelength and can resolve 179-GHz spaced wavelength-division multiplexing channels. In addition, device wavelength switching is achieved with a differential input voltage swing of /spl plusmn/1.65 V. This low bias voltage makes it compatible with complementary metal-oxide semiconductor (CMOS) control electronics for rapid switching.

Device Requirements for Optical Interconnects to Silicon Chips

Abstract: We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Abstract: Optics offers unique opportunities for reducing energy in information processing and communications while simultaneously resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including subfemtojoule devices in waveguide and novel two-dimensional (2-D) array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2-D materials and other quantum-confined structures. With such optoelectronic energy reductions, and the elimination of line charging dissipation by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery, and multiplexing. We show we can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while also solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ∼1 cm to ∼10 m that have the same energy (∼10 fJ/bit) and simplicity as local electrical wires on chip.

Next-Generation Optical Access Networks

Abstract: The main bandwidth bottleneck in today's networks is in the access segment. To address that bottleneck, broadband fiber access technologies such as passive optical networks (PONs) are an indispensable solution. The industry has selected time-division multiplexing (TDM) for current PON deployments. To satisfy future bandwidth demands, however, next-generation PON systems are being investigated to provide even higher performance. In this paper, we first review current TDM-PONs; we designate them as generation C. Next, we review next-generation PON systems, which we categorize into C+1 and C+2 generations. We expect C+1 systems to provide economic near-term bandwidth upgrade by overlaying new services on current TDM-PONs. For the long term, C+2 systems will provide more dramatic system improvement using wavelength division multiplexing technologies. Some C+2 architectures require new infrastructures and/or equipment, whereas others employ a more evolutionary approach. We also review key enabling components and technologies for C+1 and C+2 generations and point out important topics for future research.

Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review

Abstract: Optics offers unique opportunities for reducing energy in information processing and communications while resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2D materials and other quantum-confined structures. Beyond the elimination of line charging by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery and multiplexing. We can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ~ 1 cm to ~ 10 m that have the same energy (~ 10fJ/bit) and simplicity as local electrical wires on chip.

Ultralow-noise mode-locked fiber lasers and frequency combs: principles, status, and applications

Abstract: We review the most recent progress in ultralow-noise mode-locked fiber lasers and fiber-based frequency-comb sources. With the rapid progress in theory, measurement, and control of noise in passively mode-locked fiber lasers, we have reached the point where the residual carrier–envelope-offset phase jitter (when stabilized) and pulse timing jitter performance of such laser sources can be fully optimized to the unprecedented levels of attoseconds regime. In this paper, first, major principles in building such low-noise passively mode-locked fiber lasers are reviewed. We then define noise in mode-locked fiber lasers and present the basic theoretical and numerical framework for analyzing the noise in mode-locked fiber lasers. More detailed discussions on theory, measurement methods, state-of-the-art performances, and stabilization methods of intensity noise, timing jitter, and comb-line frequency noise follow. Finally, we overview today’s most representative applications of such ultralow-noise mode-locked fiber lasers and frequency-comb sources. As an already powerful tool for various high-precision applications, ultralow-noise mode-locked fiber lasers will keep finding more exciting applications in optical science and photonic technology in the coming years.