scispace - formally typeset
Search or ask a question
Author

R. Gaillard

Bio: R. Gaillard is an academic researcher from CERN. The author has contributed to research in topics: Monte Carlo method & Single event upset. The author has an hindex of 15, co-authored 38 publications receiving 653 citations.

Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the architecture of the new RadMon, the radiation reliability and the design strategy adopted for the sensors, used for monitoring the mixed radiation field of the LHC accelerator, are described highlighting the achieved improvements in terms of radiation robustness and measurement accuracy of a device which is of interest for many other research institutes.
Abstract: A system to monitor the radiation levels is required in the Large Hadron Collider (LHC) and its injection lines in order to quantify the radiation effects on electronics. Thus, the RadMons were installed in critical areas where equipment is or will be placed. The first years of operation, successive test campaigns and new requirements, raised the need for a new design of the monitor. The architecture of the new RadMon, the radiation reliability and the design strategy adopted for the sensors, used for monitoring the mixed radiation field of the LHC accelerator, are described highlighting the achieved improvements in terms of radiation robustness and measurement accuracy of a device which is of interest for many other research institutes.

74 citations

Journal ArticleDOI
TL;DR: In this article, a methodology based upon backside laser irradiations was proposed to characterize the sensitivity of power devices towards single-event burnout, which can be used to define the safe operating area.
Abstract: This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area

53 citations

Journal ArticleDOI
01 Sep 2009
TL;DR: In this paper, the authors present 2D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology.
Abstract: This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

52 citations

Journal ArticleDOI
TL;DR: In this article, the influence of the laser spot size on the threshold energy of the SEU cross-section curves was analyzed and a new methodology was proposed to correlate laser to heavy ion results.
Abstract: This work presents new results to compare EADS CCR laser experiments and heavy ion tests. More precisely, this study describes the influence of the laser spot size on the threshold energy of the SEU cross-section curves. A new methodology is proposed to correlate laser to heavy ion results.

43 citations

Journal ArticleDOI
01 Jan 2007
TL;DR: In this article, a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout was presented, thanks to high-energy heavy ion testing and device simulations.
Abstract: This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.

40 citations


Cited by
More filters
Proceedings ArticleDOI
26 Mar 2006
TL;DR: This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices and a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced.
Abstract: This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices. Specifically we analyzed the SER per bit scaling trends of SRAMs, sequentials and static combinational logic. Our results show that for SRAMs the single-bit soft error rate continues to decrease whereas the multi-bit SER increases dramatically. While the total soft error rate of logic devices (sequentials and static combinational devices) has not changed significantly, a substantial increase in the susceptibility to alpha particles is observed. Finally, a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced.

220 citations

Proceedings ArticleDOI
10 Jul 2006
TL;DR: The importance of the spread in Qcrit is shown and it is demonstrated that detailed knowledge about the current-pulse width is necessary for accurate SER estimation.
Abstract: In the current paper we investigate the factors that affect the critical charge (Q/sub crit/) for a soft error in a memory cell. Also the spread of Q/sub crit/ due to variations in the transistor model parameters is studied. The role of the current waveform that is applied in the simulation, the current pulse width, and the inclusion of back-end parasitics are discussed. Furthermore, we treat the impact on Q/sub crit/ of supply voltage, temperature, and process variant. Also, the paper deals with the effects of parameter variations through the node capacitance and the PMOS ON-current. Finally, we show the importance of the spread in Q/sub crit/ and demonstrate that detailed knowledge about the current-pulse width is necessary for accurate SER estimation.

128 citations

Journal ArticleDOI
TL;DR: Physical mechanisms of single-event effects that result in multiple-node charge collection or charge sharing, and impacts on characterizing these effects in models and ground-based testing are presented, show that full circuit prediction is not yet well understood.
Abstract: Physical mechanisms of single-event effects that result in multiple-node charge collection or charge sharing are reviewed and summarized. A historical overview of observed circuit responses is given that concentrates mainly on memory circuits. Memory devices with single-node upset mechanisms are shown to exhibit multiple cell upsets, and spatially redundant logic latches are shown to upset when charge is collected on multiple circuit nodes in the latch. Impacts on characterizing these effects in models and ground-based testing are presented. The impact of multiple-node charge collection on soft error rate prediction is also presented and shows that full circuit prediction is not yet well understood. Finally, gaps in research and potential future impacts are identified.

126 citations

Journal ArticleDOI
TL;DR: The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated circuits and devices is described, including light propagation and absorption by both linear and non-linear processes.
Abstract: The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated circuits and devices is described. The role of a pulsed laser is to provide spatial and temporal information about SEEs, information that is not available when broad-beam ion sources are used. A detailed description is given of the mechanisms involved, including light propagation and absorption by both linear and non-linear processes. Numerous examples highlight the versatility and usefulness of the technique in the study of SEEs.

123 citations

Journal ArticleDOI
01 Oct 2010
TL;DR: How output error probabilities change with increasing number of simultaneous faults is shown and the results obtained show that output error probability resulting from multiple-event transient or multiple-bit upsets can vary across different outputs and different circuits by several orders of magnitude.
Abstract: Transient faults in logic circuits are becoming an important reliability concern for future technology nodes. Radiation-induced faults have received significant attention in recent years, while multiple transients originating from a single radiation hit are predicted to occur more often. Furthermore, some effects, like reconvergent fanout-induced glitches, are more pronounced in the case of multiple faults. Therefore, to guide the design process and the choice of circuit optimization techniques, it is important to model multiple faults and their propagation through logic circuits, while evaluating the changes in error rates resulting from multiple simultaneous faults. In this paper, we show how output error probabilities change with increasing number of simultaneous faults and we also analyze the impact of multiple errors in state flip-flops, during the cycles following the cycle when fault(s) occurred. The results obtained using the proposed framework show that output error probability resulting from multiple-event transient or multiple-bit upsets can vary across different outputs and different circuits by several orders of magnitude. The results also show that the impact of different masking factors also varies across circuits and this information can be valuable for customizing protection techniques.

117 citations