https://chemistry.beloit.edu/classes/nanotech/ZnO/mattoday10_05_40.pdf

ZnO - nanostructures, defects, and devices

We present a review of current research on the optical properties of ZnO nanostructures. We provide a brief introduction to different fabrication methods for various ZnO nanostructures and some general guidelines on how fabrication parameters (temperature, vapor-phase versus solution-phase deposition, etc.) affect their properties. A detailed discussion of photoluminescence, both in the UV region and in the visible spectral range, is provided. In addition, different gain (excitonic versus electron hole plasma) and feedback (random lasing versus individual nanostructures functioning as Fabry-Perot resonators) mechanisms for achieving stimulated emission are described. The factors affecting the achievement of stimulated emission are discussed, and the results of time-resolved studies of stimulated emission are summarized. Then, results of nonlinear optical studies, such as second-harmonic generation, are presented. Optical properties of doped ZnO nanostructures are also discussed, along with a concluding outlook for research into the optical properties of ZnO.

Optical properties of ZnO nanostructures.

High-performance gas sensors prepared using p-type oxide semiconductors such as NiO, CuO, Cr2O3, Co3O4, and Mn3O4 were reviewed. The ionized adsorption of oxygen on p-type oxide semiconductors leads to the formation of hole-accumulation layers (HALs), and conduction occurs mainly along the near-surface HAL. Thus, the chemoresistive variations of undoped p-type oxide semiconductors are lower than those induced at the electron-depletion layers of n-type oxide semiconductors. However, highly sensitive and selective p-type oxide-semiconductor-based gas sensors can be designed either by controlling the carrier concentration through aliovalent doping or by promoting the sensing reaction of a specific gas through doping/loading the sensor material with oxide or noble metal catalysts. The junction between p- and n-type oxide semiconductors fabricated with different contact configurations can provide new strategies for designing gas sensors. p-Type oxide semiconductors with distinctive surface reactivity and oxygen adsorption are also advantageous for enhancing gas selectivity, decreasing the humidity dependence of sensor signals to negligible levels, and improving recovery speed. Accordingly, p-type oxide semiconductors are excellent materials not only for fabricating highly sensitive and selective gas sensors but also valuable additives that provide new functionality in gas sensors, which will enable the development of high-performance gas sensors.

Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

This Review focuses on recent developments in the use of ZnO nanostructures for dye-sensitized solar cell (DSC) applications. It is shown that carefully designed and fabricated nanostructured ZnO films are advantageous for use as a DSC photoelectrode as they offer larger surface areas than bulk film material, direct electron pathways, or effective light-scattering centers, and, when combined with TiO2, produce a core–shell structure that reduces the combination rate. The limitations of ZnO-based DSCs are also discussed and several possible methods are proposed so as to expand the knowledge of ZnO to TiO2, motivating further improvement in the power-conversion efficiency of DSCs.

https://depts.washington.edu/solgel/documents/pub_docs/journal_docs/2009/advanced_material2009.pdf

ZnO Nanostructures for Dye-Sensitized Solar Cells

Nanostructures of zinc oxide

This article surveys recent developments in the rational synthesis of single-crystalline zinc oxide nanowires and their unique optical properties. The growth of ZnO nanowires was carried out in a simple chemical vapor transport and condensation (CVTC) system. Based on our fundamental understanding of the vapor–liquid–solid (VLS) nanowire growth mechanism, different levels of growth controls (including positional, orientational, diameter, and density control) have been achieved. Power-dependent emission has been examined and lasing action was observed in these ZnO nanowires when the excitation intensity exceeds a threshold (∼40 kW cm–2). These short-wavelength nanolasers operate at room temperature and the areal density of these nanolasers on substrate readily reaches 1 × 1010 cm–2. The observation of lasing action in these nanowire arrays without any fabricated mirrors indicates these single-crystalline, well-facetted nanowires can function as self-contained optical resonance cavities. This argument is further supported by our recent near-field scanning optical microscopy (NSOM) studies on single nanowires.

R. He

Papers

Controlled growth of ZnO nanowires and their optical properties