R.J. van der Hage

Bio: R.J. van der Hage is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Magnetic field & Quantum dot. The author has an hindex of 1, co-authored 1 publications receiving 1067 citations.

Shell Filling and Spin Effects in a Few Electron Quantum Dot.

Abstract: We study atomiclike properties of artificial atoms by measuring Coulomb oscillations in vertical quantum dots containing a tunable number of electrons starting from zero. At zero magnetic field the energy needed to add electrons to a dot reveals a shell structure for a two-dimensional harmonic potential. As a function of magnetic field the current peaks shift in pairs, due to the filling of electrons into spin-degenerate single-particle states. When the magnetic field is sufficiently small, however, the pairing is modified, as predicted by Hund’s rule, to favor the filling of parallel spins. [S00319007(96)01418-4]

Making Nonmagnetic Semiconductors Ferromagnetic

Abstract: REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.

Single-electron devices and their applications

Abstract: The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

Electronic structure of quantum dots

Abstract: The properties of quasi-two-dimensional semiconductor quantum dots are reviewed. Experimental techniques for measuring the electronic shell structure and the effect of magnetic fields are briefly described. The electronic structure is analyzed in terms of simple single-particle models, density-functional theory, and "exact" diagonalization methods. The spontaneous magnetization due to Hund's rule, spin-density wave states, and electron localization are addressed. As a function of the magnetic field, the electronic structure goes through several phases with qualitatively different properties. The formation of the so-called maximum-density droplet and its edge reconstruction is discussed, and the regime of strong magnetic fields in finite dot is examined. In addition, quasi-one-dimensional rings, deformed dots, and dot molecules are considered. (Less)

A single-electron transistor made from a cadmium selenide nanocrystal

Abstract: The techniques of colloidal chemistry permit the routine creation of semiconductor nanocrystals1,2 whose dimensions are much smaller than those that can be realized using lithographic techniques3,4,5,6. The sizes of such nanocrystals can be varied systematically to study quantum size effects or to make novel electronic or optical materials with tailored properties7,8,9. Preliminary studies of both the electrical10,11,12,13 and optical properties14,15,16 of individual nanocrystals have been performed recently. These studies show clearly that a single excess charge on a nanocrystal can markedly influence its properties. Here we present measurements of electrical transport in a single-electron transistor made from a colloidal nanocrystal of cadmium selenide. This device structure enables the number of charge carriers on the nanocrystal to be tuned directly, and so permits the measurement of the energy required for adding successive charge carriers. Such measurements are invaluable in understanding the energy-level spectra of small electronic systems, as has been shown by similar studies of lithographically patterned quantum dots3,4,5,6 and small metallic grains17.

Few-electron quantum dots

Abstract: We review some electron transport experiments on few-electron, vertical quantum dot devices. The measurement of current versus source–drain voltage and gate voltage is used as a spectroscopic tool to investigate the energy characteristics of interacting electrons confined to a small region in a semiconducting material. Three energy scales are distinguished: the single-particle states, which are discrete due to the confinement involved; the direct Coulomb interaction between electron charges on the dot; and the exchange interaction between electrons with parallel spins. To disentangle these energies, a magnetic field is used to reorganize the occupation of electrons over the single-particle states and to induce changes in the spin states. We discuss the interactions between small numbers of electrons (between 1 and 20) using the simplest possible models. Nevertheless, these models consistently describe a large set of experiments. Some of the observations resemble similar phenomena in atomic physics, such as shell structure and periodic table characteristics, Hund’s rule, and spin singlet and triplet states. The experimental control, however, is much larger than for atoms: with one device all the artificial elements can be studied by adding electrons to the quantum dot when changing the gate voltage.