R
R. M. Fleming
Researcher at Alcatel-Lucent
Publications - 59
Citations - 4384
R. M. Fleming is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 31, co-authored 59 publications receiving 4306 citations. Previous affiliations of R. M. Fleming include Air Products & Chemicals.
Papers
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C60 thin film transistors
TL;DR: In this paper, N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element, showing on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V
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Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes
Chang-Beom Eom,R. B. van Dover,Julia M. Phillips,D. J. Werder,J. H. Marshall,Cheng-Hsuan Chen,Robert J. Cava,R. M. Fleming,David K. Fork +8 more
TL;DR: In this article, an Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3 /SrRuOO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and 100) Si with an yttria stabilized zirconia buffer layer.
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Discovery of a useful thin-film dielectric using a composition-spread approach
TL;DR: In this article, a composition spread technique was used to evaluate thin-film dielectrics with high dielectric constant and high breakdown field for the Zr 0.15Sn0.3Ti0.55O2−δ system.
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Very large magnetoresistance in perovskite‐like La‐Ca‐Mn‐O thin films
TL;DR: In this article, it was shown that the peak magnetoresistance peak occurs not at the temperature of magnetic transition but at a temperature where the magnetization is still substantial, the spin disorder scattering is not likely to be the main mechanism in these highly magnetoresistive films.
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Deposition and characterization of fullerene films
TL;DR: In this paper, optical and electrical measurements reveal uniform films over the thickness range 200-1000 A. They obtain optical absorption coefficients having values between those of Si and Ge and a relative permittivity having a value close to that of amorphous SiO2.