Author
R. Minder
Bio: R. Minder is an academic researcher from University of Basel. The author has contributed to research in topics: Electron mobility & Drift velocity. The author has an hindex of 5, co-authored 6 publications receiving 763 citations.
Papers
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TL;DR: In this article, the drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3. 102to 6. 104V/cm) at temperatures up to 430 K. The mean square deviation was in all cases less than 3.8 percent.
Abstract: The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.
591 citations
TL;DR: In this article, the magneto-stark effect and electronic transport properties on GaSe have been studied and it has been shown that GaSe has nearly isotropic electronic states at the forbidden gap and the valence band anisotropy is anomalous.
112 citations
TL;DR: In this paper, electron and hole-drift velocity is measured in the layer semiconductors HgI2, GaSe, PbI2 and GaS, mainly on the direction parallel to the c-axis between 80 and 400 K.
89 citations
TL;DR: In this article, the authors used the time-of-flight technique to determine the electron and hole drift velocities in mercuric iodide crystals and found that the electron mobility is constant up to fields of 30 kV/cm, equal to 100 cm2/V sec at room temperature, and proportional to T−0.9 in the temperature range 114-300 °K.
Abstract: The time‐of‐flight technique has been used to determine the electron and hole drift velocities in mercuric iodide crystals. The electron mobility is constant up to fields of 30 kV/cm, equal to 100 cm2/V sec at room temperature, and proportional to T−0.9 in the temperature range 114–300 °K. The hole mobility is equal to 4 cm2/V sec at room temperature and exhibits a T−1.7 dependence between 140 and 240 °K and a T−3.7 dependence between 240 and 350 °K.
25 citations
TL;DR: The longitudinal diffusion coefficient of electrons in CdTe has been measured with the time-of-flight technique at 300 K for field strength ranging from Ohmic values up to 60 kV/cm.
10 citations
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TL;DR: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported, demonstrating the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.
Abstract: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported. The saturation velocity is attributed to scattering by interfacial phonons in the silicon dioxide layer supporting the graphene channels. These results demonstrate the feasibility of graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.
1,600 citations
TL;DR: In this article, the drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3. 102to 6. 104V/cm) at temperatures up to 430 K. The mean square deviation was in all cases less than 3.8 percent.
Abstract: The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.
591 citations
TL;DR: Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported.
Abstract: Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.
576 citations
TL;DR: In this article, a review of different publications on the carrier mobilities in silicon is presented, and an approximated calculation procedure is proposed which permits a quick and accurate evaluation of these mobilities over a large range of temperatures, doping concentrations and injection levels.
Abstract: From a review of different publications on the carrier mobilities in silicon, the authors propose an approximated calculation procedure which permits a quick and accurate evaluation of these mobilities over a large range of temperatures, doping concentrations and injection-levels. The proposed relations are well adapted to semiconductor device simulation becuase they allow short computation times.
270 citations
TL;DR: The recent efforts and progress in exploring novel 2DSCs beyond graphene and TMDCs for ultra-thin body transistors are reviewed, discussing the merits, limits and prospects of each material.
Abstract: Two-dimensional semiconductors (2DSCs) have attracted considerable attention as atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of a single- or few-atom-thick, covalently bonded lattice, in which all carriers are confined in their atomically thin channel with superior gate controllability and greatly suppressed OFF-state current, in contrast to typical bulk semiconductors plagued by short channel effects and heat generation from static power. Additionally, 2DSCs are free of surface dangling bonds that plague traditional semiconductors, and hence exhibit excellent electronic properties at the limit of single atom thickness. Therefore, 2DSCs can offer significant potential for the ultimate transistor scaling to single atomic body thickness. Earlier studies of graphene transistors have been limited by the zero bandgap and low ON–OFF ratio of graphene, and transition metal dichalcogenide (TMDC) devices are typically plagued by insufficient carrier mobility. To this end, considerable efforts have been devoted towards searching for new 2DSCs with optimum electronic properties. Within a relatively short period of time, a large number of 2DSCs have been demonstrated to exhibit unprecedented characteristics or unique functionalities. Here we review the recent efforts and progress in exploring novel 2DSCs beyond graphene and TMDCs for ultra-thin body transistors, discussing the merits, limits and prospects of each material.
270 citations