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R. Paul

Bio: R. Paul is an academic researcher from University of Engineering & Management. The author has contributed to research in topics: Terahertz radiation & Magnetic field. The author has an hindex of 3, co-authored 10 publications receiving 12 citations.

Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors derived the expressions for the gate capacitance in quantum MOSFET devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity.
Abstract: The Heisenberg's scientific theory of quantum science since its beginning has been proved to be instrumental in unlocking varied vital quantum phenomena. In what follows the Heisenberg's scientific theory has been used to derive the expressions for the gate capacitance in Quantum MOSFET Devices manufactured from completely different technologically vital nonstandard materials by formulating the 2D electron statistics under very low temperature so that the Fermi function tends to unity. For numerical computations we take Cd3As2, the best quality very high mobility semiconductor and non-linear optical (e.g., CdGeAs2) compounds from which quantum MOSFET devices are made of by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the frame work of Kane's matrix methodology that successively generates new two dimensional electron energy versus wave vector relation for both low and very large externally applied electric field of force respectively. Under many special conditions, the corresponding statistics and therefore the gate capacitance for the quantum MOSFETs, whose e–ks equation (e is carrier energy and ks is the 2D wave vector) are defined by various models of III–V semiconducting samples originally derived by Kane create special cases of our extended formalism. It's been found taking quantum MOSFETs of CdGeAs2, InAs, InSb, Hg1–xCdxTe and In1–xGaxAs yP1–y lattice matched to InP that the gate capacitance at the electrical quantum limit will exhibit monotonic increasing function with changing field at the surface, the applied voltage at the gate for each of the compounds and therefore the actual results have one to one correspondence with the energy band constants showing an inclination of asymptotic results at comparatively large values of the independent variables for all the cases. The gradient rates for all curves change from one material to a different material. With decreasing alloy composition, the gate capacitance will increase for each of quantum confined MOSFETs made of various alloy compounds. For the aim of coherent presentation we've got conjointly planned the periodical Fermi energy at high field of force limits and gate voltage for few quantum confined MOSFETs.

4 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.
Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this paper, the carrier contribution to the 2nd and 3rd order elastic constants in opto-electronic materials in terahertz frequency by taking the bulk of various optoelectronic compounds was studied.
Abstract: In this chapter, we study the carrier contribution to the 2nd and 3rd order elastic constants (\(\phi_{1}\) and \(\phi_{2}\)) in opto-electronic materials in terahertz frequency by taking the bulk of various opto-electronic compounds. The influence of magnetic quantization, 1D quantization and 2D quantization has also been studied in this context. It appears that both \(\phi_{1}\) and \(\phi_{2}\) changes with wave length, intensity, electron statistics, alloy composition and nano thickness in different ways for all the opto-electronic compounds as considered here and the influence of quantization of band state is also being apparent from all the figures.

3 citations

Book ChapterDOI
01 Jan 2021
TL;DR: In this paper, the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III-V, II-VI, IV-VI and strained compounds, respectively, was investigated.
Abstract: We investigate the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III–V, II–VI, IV–VI and strained compounds, respectively. It has been found taking ED QFs and ALs of specific materials of the important 2D electronic compounds as examples that the elastic constants (C1 and C2) change with nano-size of the said QFs and the two-dimensional carrier statistics per unit area in different oscillatory ways. The influence of electric field for both the limits in inversion layers of non-parabolic materials has also been studied. Besides, C1 and C2 are in nice agreement with our suggestive relationships for determining them experimentally.

Cited by
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Book
11 Aug 2014
TL;DR: In this article, the ER in NIPI structures of Heavily Doped (HD) Non-Parabolic Semiconductors under external photo-excitation was investigated.
Abstract: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The ER in NIPI Structures of HD Non-Parabolic Semiconductors.- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors.- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications.- Conclusion and Scope for Future.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The ER in HDS Under Magnetic Quantization.- The ER in HDS and their Nano-Structures Under Cross- Fields Configuration.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under Strong Electric Field.- The ER in Super-lattices of HDS Under Magnetic Quantization.

4 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.
Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this paper, the carrier contribution to the 2nd and 3rd order elastic constants in opto-electronic materials in terahertz frequency by taking the bulk of various optoelectronic compounds was studied.
Abstract: In this chapter, we study the carrier contribution to the 2nd and 3rd order elastic constants (\(\phi_{1}\) and \(\phi_{2}\)) in opto-electronic materials in terahertz frequency by taking the bulk of various opto-electronic compounds. The influence of magnetic quantization, 1D quantization and 2D quantization has also been studied in this context. It appears that both \(\phi_{1}\) and \(\phi_{2}\) changes with wave length, intensity, electron statistics, alloy composition and nano thickness in different ways for all the opto-electronic compounds as considered here and the influence of quantization of band state is also being apparent from all the figures.

3 citations