R
R Stengl
Researcher at Infineon Technologies
Publications - 1
Citations - 357
R Stengl is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Charge carrier & Avalanche breakdown. The author has an hindex of 1, co-authored 1 publications receiving 342 citations.
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On the morphology and the electrochemical formation mechanism of mesoporous silicon
V Lehmann,R Stengl,A Luigart +2 more
TL;DR: In this paper, the mesopore morphology and its dependence on formation parameters, such as HF concentration, current density, bias, and substrate doping density, is investigated in detail.