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R Stengl

Researcher at Infineon Technologies

Publications -  1
Citations -  357

R Stengl is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Charge carrier & Avalanche breakdown. The author has an hindex of 1, co-authored 1 publications receiving 342 citations.

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On the morphology and the electrochemical formation mechanism of mesoporous silicon

TL;DR: In this paper, the mesopore morphology and its dependence on formation parameters, such as HF concentration, current density, bias, and substrate doping density, is investigated in detail.