R.T. Leonard

TL;DR: In this paper, the authors show the progression in the development of semi-insula ti g SiC grown by the sublimation technique from extrinsically doped material to high purity semi-insulating (HPSI) 4H-SiC bulk crystals of 2-inch and 3-inch diameter without re sorting to the intentional introduction of elemental deep level dopants such as vanadium.

TL;DR: In this article, the growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined, and methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxially layers are discussed.

TL;DR: The quest of driving SiC toward the realization of its full potential as a semiconductor material continues in many organizations world-wide as discussed by the authors, and significant progress has been made in several key areas.

TL;DR: In this article, the status and requirements for SiC substrates for power devices such as Schottky and PiN diodes are discussed, and several substrate material aspects that are key.