R. Weiβ

Bio: R. Weiβ is an academic researcher. The author has contributed to research in topics: Leakage (electronics) & Impact ionization. The author has an hindex of 1, co-authored 1 publications receiving 140 citations.

Strip detector design for ATLAS and HERA-B using two-dimensional device simulation

Abstract: Irradiation scenarios were simulated in order to evaluate different technology and design options for silicon strip detectors exposed to a high luminosity environment. Two-dimensional process and device simulations were performed to get an insight into the device behaviour. The boundary condition of the free oxide regions between the strips was evaluated thoroughly to obtain correct field distributions. Using these results the formation of electron accumulation layers on the surface of the p-side and the depletion voltage dependence on the strip geometry can be explained. We investigated the “blocking implant” and the “spray implant” techniques as promising candidates for the n-side isolation of irradiated detectors. The main drawback of the “blocking implanted” devices is the increase of the electric field with increasing oxide charges. This implies the danger of impact ionization in irradiated devices. A “spray implanted” isolation layer leads to the highest electric field in the non-irradiated state which has the advantage of a better testability. Small gaps between strips as used in charge division readout reduce electric fields and leakage currents.

ATLAS pixel detector electronics and sensors

Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.

The ATLAS silicon pixel sensors

Abstract: Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.

Evaluation of Energy Loss and Charge Sharing in Cadmium Telluride Detectors for Photon-Counting Computed Tomography

Abstract: We present estimates of energy loss and charge sharing for a pixelated cadmium telluride (CdTe) detector used for photon-counting spectral computed tomography (CT). In a photon-counting pixelated CdTe detector, several physical effects lead to detected events with reduced energies, including Compton scattering, fluorescence emission, charge diffusion, trapping of charge carriers and slow-hole-motion-induced incomplete charge collection. Charge sharing is the result of the lost energy being collected by adjacent pixels. We simulated the photon transport and the charge-collection process with a Monte Carlo-based simulation and evaluated these effects on the detector performance. The trapping effect and poor hole collection have been studied together using an analytical model. We also investigated the detector response under the influence of only the fluorescence effect. We conclude that the charge sharing effects should be taken into account when the pixel is smaller than 1 mm2. A straightforward way to decrease the double counting of X-rays from events with charge sharing is to increase the electronic threshold. However, increasing the threshold comes at the cost of losing low-energy events, which is undesirable, at least in applications such as pediatric imaging.

Radiation hardness of silicon detectors: current status

Abstract: Silicon detectors are used or going to be used as tracking devices in many high energy physics experiments. Therefore they are located close to the interaction point, where the detectors are exposed to very high particle fluxes and ionization doses, especially in future experiments with very high energies and luminosities. Ongoing investigations concerning the radiation damage, started already several years ago, include bulk and surface damage related questions. The two main objectives of these studies are: (1) predict the radiation induced change in the detector parameters expected for any application, and (2) improve the radiation hardness of the detectors. A general overview of the current progress of the radiation hardness studies towards these goals is given here.

Design and performance of the silicon sensors for the CMS barrel pixel detector

Abstract: The CMS experiment at the (LHC) includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100×150μm2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN-SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.