R
R. Wheadon
Researcher at Imperial College London
Publications - 18
Citations - 794
R. Wheadon is an academic researcher from Imperial College London. The author has contributed to research in topics: Microstrip & Silicon. The author has an hindex of 10, co-authored 18 publications receiving 768 citations.
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Journal ArticleDOI
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,E. Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,Claude Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,Gerhard Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Mikuž,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kristine M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,Spyros Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Žontar +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI
Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,Eckhart Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,C. Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,G. Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Miku,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,V. Radicci,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kevin M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,S. Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Zontar +140 more
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Journal ArticleDOI
Radiation damage by neutrons and protons to silicon detectors
TL;DR: In this paper, the performance of double-sided microstrip detectors constructed using a field plate isolation technique on the n-type surface has been evaluated with high doses of both neutrons and photons.
Journal ArticleDOI
Radiation tolerance of single-sided silicon microstrips
A. Holmes-Siedle,M. Robbins,Stephen Watts,Phillip Allport,Richard Brenner,H. G. Moser,Shaun Roe,J. Straver,P. Weilhammer,Peter Chochula,Ivan Mikulec,S. Moszczynski,M. Turala,Wladyslaw Dabrowski,Pawel Grybos,Marek Idzik,Demetrios Loukas,Konstantinos Misiakos,I. Siotis,K. Zachariadou,W. Dulinski,J. Michele,M. Schaeffer,Renato Turchetta,P.S.L. Booth,J.D. Richardson,N. A. Smith,K. Gill,Geoffrey Hall,R. Sachdeva,S. Sotthibandhu,D. Vité,R. Wheadon,C. Arrighi,P A. Delpierre,M.-C. Habrard,J. C. Clemens,T. Mouthuy,B.S. Avset,L. Evensen,A. Hanneborg,T.A. Hansen,Dario Bisello,A. Giraldo,A. Paccagnella,Leonid Kurchaninov,E. Spiriti,R. J. Apsimon,Paolo Giubellino,Luciano Ramello,W. L. Prado Da Silva,Manfred Krammer,M. Schuster +52 more
TL;DR: In this article, the RD20 collaboration investigated the design and operation of an LHC inner tracking detector based on silicon microstrips and showed that the annealing of effective doping changes caused by high neutron fluences, one of the major limits to detector lifetime, is strongly inhibited by cooling below room temperature.
Journal ArticleDOI
Punch-through currents and floating strip potentials in silicon detectors
TL;DR: In this paper, a simple computer model was used to predict the expected variation with the interstrip gap in reasonable agreement with measured values for a variety of detectors, and the factors influencing the threshold for the punch-through effect were compared.