Rachel D. Naguy

Bio: Rachel D. Naguy is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Thin film & Boron nitride. The author has an hindex of 4, co-authored 9 publications receiving 347 citations. Previous affiliations of Rachel D. Naguy include University of Dayton Research Institute.

Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition

Abstract: Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

Continuous Ultra-Thin MOS2 Films Grown by Low-Temperature Physical Vapor Deposition (Postprint)

Abstract: : Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 deg C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

Direct synthesis of ultra-thin large area transition metal dichalcogenides and their heterostructures on stretchable polymer surfaces

Abstract: A scalable approach for synthesis of ultra-thin (<10 nm) transition metal dichalcogenides (TMD) films on stretchable polymeric materials is presented. Specifically, magnetron sputtering from pure TMD targets, such as MoS2 and WS2, was used for growth of amorphous precursor films at room temperature on polydimethylsiloxane substrates. Stacks of different TMD films were grown upon each other and integrated with optically transparent insulating layers such as boron nitride. These precursor films were subsequently laser annealed to form high quality, few-layer crystalline TMDs. This combination of sputtering and laser annealing is commercially scalable and lends itself well to patterning. Analysis by Raman spectroscopy, scanning probe, optical, and transmission electron microscopy, and x-ray photoelectron spectroscopy confirm our assertions and illustrate annealing mechanisms. Electrical properties of simple devices built on flexible substrates are correlated to annealing processes. This new approach is a significant step toward commercial-scale stretchable 2D heterostructured nanoelectronic devices.

Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

Abstract: Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO2 was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO2 has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO2 substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO2 (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm2/V s, respectively. In addition, significant improvement in carrier homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5 V and residual carrier concentration of 7.65 × 1011 cm−2 was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged im...

Scanning tunneling microscopy of an interfacial two-dimensional electron gas in oxide heterostructures

Abstract: Using an advanced technique combining pulsed laser deposition growth of $\mathrm{LaAl}{\mathrm{O}}_{3}$, $\mathrm{LaTi}{\mathrm{O}}_{3}$, and $\mathrm{SrTi}{\mathrm{O}}_{3}$ we effectively constructed half-integer unit cell number $\mathrm{LaAl}{\mathrm{O}}_{3}\text{\ensuremath{-}}\mathrm{SrTi}{\mathrm{O}}_{3}$ heterostructures where all interfaces are of LaO-$\mathrm{Ti}{\mathrm{O}}_{2}$ type, and where a two-dimensional electron gas (2DEG) forms a symmetric $n$-type bilayer. Using ultrahigh-vacuum scanning tunneling microscopy we investigated the properties of the surface 2DEG in these heterostructures. Our results indicate that the surface 2DEG is strongly, within one unit cell, confined at the interface. Tunneling spectroscopy of the surface 2DEG reveals thickness-dependent band-gap changes attributed to the quantum size effect.

Recent Advances in Two-Dimensional Materials beyond Graphene

Abstract: The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a field: two-dimensional (2D) materials In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement Here, we review significant recent advances and important new developments in 2D materials “beyond graphene” We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (ie, silicene, phosphorene, etc) and transition metal carbide- and carbon nitride-based MXenes We then discuss the doping and functionalization of 2

Intrinsic ripples in graphene

Abstract: The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.

Two-dimensional materials for next-generation computing technologies.

Abstract: Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal–oxide–semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies. This Review discusses the recent progress and future prospects of two-dimensional materials for next-generation nanoelectronics.

Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass

Abstract: Monolayer transition metal dichalcogenides (TMDs) have become essential two-dimensional materials for their perspectives in engineering next-generation electronics. For related applications, the controlled growth of large-area uniform monolayer TMDs is crucial, while it remains challenging. Herein, we report the direct synthesis of 6-inch uniform monolayer molybdenum disulfide on the solid soda-lime glass, through a designed face-to-face metal-precursor supply route in a facile chemical vapor deposition process. We find that the highly uniform monolayer film, with the composite domains possessing an edge length larger than 400 µm, can be achieved within a quite short time of 8 min. This highly efficient growth is proven to be facilitated by sodium catalysts that are homogenously distributed in glass, according to our experimental facts and density functional theory calculations. This work provides insights into the batch production of highly uniform TMD films on the functional glass substrate with the advantages of low cost, easily transferrable, and compatible with direct applications. Growth of large-area monolayer transition metal dichalcogenides is critical for their application but remains challenging. Here Yang et al. report rapid chemical vapor deposition of 6-inch monolayer molybdenum disulfide by sufficiently uniformly supplying the precursors and catalysts.

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

Abstract: Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1–2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.