R
Rakesh K. Jain
Researcher at Harvard University
Publications - 1528
Citations - 198912
Rakesh K. Jain is an academic researcher from Harvard University. The author has contributed to research in topics: Angiogenesis & Cancer. The author has an hindex of 200, co-authored 1467 publications receiving 177727 citations. Previous affiliations of Rakesh K. Jain include Government Medical College, Thiruvananthapuram & University of Oslo.
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Journal ArticleDOI
Efficiency of naphthalene and salicylate degradation by a recombinant Pseudomonas putida mutant strain defective in glucose metabolism.
TL;DR: Results obtained indicate that the impairment of glucose metabolism leads to better degradation of naphthalene and salicylate in the presence of glucose.
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Outcome after disarticulation of the hip for sarcomas
TL;DR: Disarticulation of the hip remains a disabling procedure usually carried out for high grade sarcomas with extensive involvement of bone and soft tissues in the thigh, but long term survival is possible if wide margins of excision can be achieved.
Journal ArticleDOI
MicroRNA-378 enhances radiation response in ectopic and orthotopic implantation models of glioblastoma.
Wende Li,Yujiao Liu,Weining Yang,Xiaoxing Han,Sen Li,Hao Liu,Leo E. Gerweck,Dai Fukumura,Jay S. Loeffler,Burton B. Yang,Rakesh K. Jain,Peigen Huang +11 more
TL;DR: Higher miR-378 expression in U87-miR- 378 cells promotes tumor growth, angiogenesis, radiation-induced TGD, and prolongs survival of orthotopic tumor-bearing hosts.
Journal Article
Modulation of A-NK cell rigidity: In vitro characterization and in vivo implications for cell delivery.
TL;DR: It is shown that the rigidity of injected effector cells directly affects resistance to passage through tissue, and modulation of cytoskeletal organization can be used to decrease cell rigidity, but can also compromise therapeutic efficacy.
Proceedings ArticleDOI
Novel AlInN/GaN integrated circuits operating up to 500 °C
TL;DR: The feasibility of the technology was demonstrated by fabrication and testing inverter and differential amplifier ICs using AlInN/GaN heterostructures, and the developed ICs show stable performance with unit-gain bandwidth above 1 MHz and internal response time 45 ns*.