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Rao Tummala

Researcher at Georgia Institute of Technology

Publications -  628
Citations -  12781

Rao Tummala is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Interposer & Capacitor. The author has an hindex of 43, co-authored 623 publications receiving 11663 citations. Previous affiliations of Rao Tummala include Qualcomm & IBM.

Papers
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Journal ArticleDOI

Next-generation microvia and global wiring technologies for SOP

TL;DR: In this article, the authors summarized the historical evolution of microvia technologies worldwide and discussed the key emerging global microvia research and development in the fabrication of multifunction SOP packages including rapid curing of low-loss dielectric thin films on organic substrates, environmentally friendly high-speed electroless copper plating, ultrafine lines, and spaces down to 5 /spl mu/m and low-cost stacked via structures without chemical-mechanical polishing.
Journal ArticleDOI

First Demonstration of Compact, Ultra-Thin Low-Pass and Bandpass Filters for 5G Small-Cell Applications

TL;DR: In this paper, a package integration of 5G filters with ultrashort 3D interconnects allows for low interconnect losses that are similar to that of on-chip filters, but low component insertion loss of off-chip discrete filters.
Proceedings ArticleDOI

Comparison of thermal performance between glass and silicon interposers

TL;DR: In this article, the authors compared the thermal performance of glass and silicon interposers for mobile applications, using computational modeling, and showed that glass interposer provides significantly better thermal isolation between logic and memory chips.
Journal ArticleDOI

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

TL;DR: In this paper, a numerical and experimental analysis of thermomechanical deformation in high-aspect-ratio copper electroplated through-silicon vias (TSVs), which were fabricated by deep reactive ion etching, thermal oxidation, and bottom-up electroplating processes, is presented.
Proceedings ArticleDOI

Design of inductors in organic substrates for 1-3 GHz wireless applications

TL;DR: In this article, the first time such high Q inductors have been demonstrated in this technology, the different inductor designs, optimization schemes, and trade-offs between different topologies have been discussed.