Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

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Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

The development and application of magnetic technologies employing microfabricated magnetic structures for the production of switching components has generated enormous interest in the scientific and industrial communities over the last decade. Magnetic actuation offers many benefits when compared to other schemes for microelectromechanical systems (MEMS), including the generation of forces that have higher magnitude and longer range. Magnetic actuation can be achieved using different excitation sources, which create challenges related to the integration with other technologies, such as CMOS (Complementary Metal Oxide Semiconductor), and the requirement to reduce power consumption. Novel designs and technologies are therefore sought to enable the use of magnetic switching architectures in integrated MEMS devices, without incurring excessive energy consumption. This article reviews the status of magnetic MEMS technology and presents devices recently developed by various research groups, with key focuses on integrability and effective power management, in addition to the ability to integrate the technology with other microelectronic fabrication processes.

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Integrated Magnetic MEMS Relays: Status of the Technology

The increasing demand for low loss, high Q devices for high frequency applications has led to the development of MEMS components in the RF domain. RF MEMS has evolved over the past decade and it has emerged as a potential technology for wireless, mobile and satellite communication and defence applications. Extensive research has been carried out to identify and overcome the limitations of RF MEMS technology for replacing PIN or FET based switches for low- loss applications. The main advantage of this technology is that the devices can be manufactured by processes similar to that of VLSI and the advancement of VLSI technology has helped in the realization of many sub millimeter- sized parts to provide RF functionality. RF MEMS components include resonators, oscillators, tunable filters, switches, switched capacitors, varactors and inductors. Among these the RF MEMS switch has emerged as a frontrunner for its high level of RF performance, while maintaining ultra-low-power dissipation and large-scale integration. The paper briefly outlines the application areas of RF MEMS switches and also focuses on the research efforts that have gone into maturing the technology.

RF MEMS SWITCH: An overview at- a-glance

Analysis and optimization of two movable plates RF MEMS switch for simultaneous improvement in actuation voltage and switching time

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4$\mu$m) with low actuation voltage (7,5V). This design presents also a good contact force and improve the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24GHz applications, based on this design, has been simulated.

A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane Using four electrodes, this structure enables four states which allowed large deflections (4 mum) with low actuation voltage (7,5 V) This design presents also a good contact force and improves the restoring force of the structure As an example of application, a Single Pole Double Throw (SPDT) for 24 GHz applications, based on this design, has been simulated

http://documents.irevues.inist.fr/bitstream/handle/2042/16859/dtip08056.pdf?sequence=1

Renaud Robin

Papers

A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

A new four states high deflection low actuation voltage electrostatic MEMS switch for RF applications