Renee D. Diehl

Bio: Renee D. Diehl is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Electron diffraction & Quasicrystal. The author has an hindex of 32, co-authored 143 publications receiving 4308 citations. Previous affiliations of Renee D. Diehl include University of Pennsylvania & Colorado School of Mines.

Surface Science: An Introduction

Abstract: SURFACE STRUCTURE, THERMODYNAMICS, AND MOBILITY. Atomic Structure of Surfaces. Electronic Structure of Surfaces. Surface Tension. Thermodynamics of One-Component Systems. Thermodynamics of Multicomponent Systems. Surface Mobility. GAS-SURFACE INTERACTIONS. The Kinetic Theory of Gases. Molecular Beam Formation. Gas Scattering. Adsorption-The Kinetic View. Physical Adsorption. Chemisorption. Surface Chemical Reactions. ENERGETIC PARTICLE-SURFACE INTERACTIONS. Electron-Surface Interactions. Ion-Surface Interactions. Photon-Surface Interactions. CRYSTAL GROWTH. Crystal Nucleation and Growth. Index.

First direct observation of Dirac fermions in graphite

Abstract: Originating from relativistic quantum field theory, Dirac fermions have been invoked recently to explain various peculiar phenomena in condensed-matter physics, including the novel quantum Hall effect in graphene1,2, the magnetic-field-driven metal–insulator-like transition in graphite3,4, superfluidity in 3He (ref. 5) and the exotic pseudogap phase of high-temperature superconductors6,7. Despite their proposed key role in those systems, direct experimental evidence of Dirac fermions has been limited. Here, we report the first direct observation of relativistic Dirac fermions with linear dispersion near the Brillouin zone (BZ) corner H, which coexist with quasiparticles that have a parabolic dispersion near another BZ corner K. In addition, we also report a large electron pocket that we attribute to defect-induced localized states. Thus, graphite presents a system in which massless Dirac fermions, quasiparticles with finite effective mass and defect states all contribute to the low-energy electronic dynamics.

The rise of graphene

Abstract: Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

The electronic properties of graphene

Abstract: This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

A graphene-based broadband optical modulator

Abstract: Graphene, the single-atom-thick form of carbon, holds promise for many applications, notably in electronics where it can complement or be integrated with silicon-based devices. Intense efforts have been devoted to develop a key enabling device, a broadband, fast optical modulator with a small device footprint. Now Liu et al. demonstrate an exciting new possibility for graphene in the area of on-chip optical communication: a graphene-based optical modulator integrated with a silicon chip. This new device relies on the electrical tuning of the Fermi level of the graphene sheet, and achieves modulation of guided light at frequencies over 1 gigahertz, together with a broad operating spectrum. At just 25 square micrometres in area, it is one of the smallest of its type. Integrated optical modulators with high modulation speed, small footprint and large optical bandwidth are poised to be the enabling devices for on-chip optical interconnects1,2. Semiconductor modulators have therefore been heavily researched over the past few years. However, the device footprint of silicon-based modulators is of the order of millimetres, owing to its weak electro-optical properties3. Germanium and compound semiconductors, on the other hand, face the major challenge of integration with existing silicon electronics and photonics platforms4,5,6. Integrating silicon modulators with high-quality-factor optical resonators increases the modulation strength, but these devices suffer from intrinsic narrow bandwidth and require sophisticated optical design; they also have stringent fabrication requirements and limited temperature tolerances7. Finding a complementary metal-oxide-semiconductor (CMOS)-compatible material with adequate modulation speed and strength has therefore become a task of not only scientific interest, but also industrial importance. Here we experimentally demonstrate a broadband, high-speed, waveguide-integrated electroabsorption modulator based on monolayer graphene. By electrically tuning the Fermi level of the graphene sheet, we demonstrate modulation of the guided light at frequencies over 1 GHz, together with a broad operation spectrum that ranges from 1.35 to 1.6 µm under ambient conditions. The high modulation efficiency of graphene results in an active device area of merely 25 µm2, which is among the smallest to date. This graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.

Substrate-induced bandgap opening in epitaxial graphene

Abstract: Graphene has shown great application potential as the hostmaterial for next-generation electronic devices. However, despite itsintriguing properties, one of the biggest hurdles for graphene to beuseful as an electronic material is the lack of an energy gap in itselectronic spectra. This, for example, prevents the use of graphene inmaking transistors. Although several proposals have been made to open agap in graphene's electronic spectra, they all require complexengineering of the graphene layer. Here, we show that when graphene isepitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. Thisgap decreases as the sample thickness increases and eventually approacheszero when the number of layers exceeds four. We propose that the originof this gap is the breaking of sublattice symmetry owing to thegraphene-substrate interaction. We believe that our results highlight apromising direction for band gap engineering of graphene.