R
Reza Arghavani
Researcher at Applied Materials
Publications - 28
Citations - 1386
Reza Arghavani is an academic researcher from Applied Materials. The author has contributed to research in topics: Silicon nitride & Flash memory. The author has an hindex of 17, co-authored 28 publications receiving 1385 citations.
Papers
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Patent
Post treatment of low k dielectric films
Zhenjiang Cui,Josephine J. Chang,Alexandros T. Demos,Reza Arghavani,Derek R. Witty,Helen R. Armer,Girish Dixit,Hichem M'Saad +7 more
TL;DR: In this article, a method of depositing a low dielectric constant film on a substrate and post-treating the low-dielectric-constant film is provided.
Patent
Mixing energized and non-energized gases for silicon nitride deposition
Kee Bum Jung,Dale R. Du Bois,Lun Tsuei,Lihua Li Huang,Martin Jay Seamons,Soovo Sen,Reza Arghavani,Michael Chiu Kwan +7 more
TL;DR: A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber as discussed by the authors.
Patent
Method for producing gate stack sidewall spacers
TL;DR: In this article, a method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on the gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0.
Patent
Method for forming a low thermal budget spacer
TL;DR: In this article, a method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3 and bis-(tertiarybutylamine)silane, and striking a second plasma to create a carbon-doped nitride layer on the oxide layer.
Patent
Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild
TL;DR: In this paper, the authors proposed a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1.