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Richard S. Muller
Researcher at University of California, Berkeley
Publications - 290
Citations - 15609
Richard S. Muller is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Silicon & Surface micromachining. The author has an hindex of 65, co-authored 290 publications receiving 15273 citations. Previous affiliations of Richard S. Muller include University of California & Stanford University.
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Book
Device electronics for integrated circuits
TL;DR: In this article, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Etch rates for micromachining processing
TL;DR: The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H/sub 3/PO/sub 4), HNO/sub
Book
Device Electronics for Integrated Circuits
TL;DR: In this paper, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Journal ArticleDOI
Surface micromachining for microelectromechanical systems
TL;DR: Surface micromachining is characterized by the fabrication of micromechanical structures from deposited thin films as discussed by the authors, which typically requires that they be freed from the planar substrate.
Journal ArticleDOI
IC-processed electrostatic micromotors
TL;DR: In this paper, the authors describe the design, fabrication and operation of several micromotors that have been produced using integrated-circuit processing and demonstrate that rotors and stators for these motors are formed from polycrystalline silicon 1.0-1.5 μm thick.