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Robert A. Street

Bio: Robert A. Street is an academic researcher from PARC. The author has contributed to research in topics: Amorphous silicon & Thin-film transistor. The author has an hindex of 33, co-authored 132 publications receiving 5427 citations.


Papers
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Journal ArticleDOI
TL;DR: This review article takes a retrospective look at the research and development of OPV, and focuses on recent advances of solution-processed materials and devices during the last decade, particular the polymer version of the materials and Devices.
Abstract: Organic photovoltaic (OPV) technology has been developed and improved from a fancy concept with less than 1% power conversion efficiency (PCE) to over 10% PCE, particularly through the efforts in the last decade. The significant progress is the result of multidisciplinary research ranging from chemistry, material science, physics, and engineering. These efforts include the design and synthesis of novel compounds, understanding and controlling the film morphology, elucidating the device mechanisms, developing new device architectures, and improving large-scale manufacture. All of these achievements catalyzed the rapid growth of the OPV technology. This review article takes a retrospective look at the research and development of OPV, and focuses on recent advances of solution-processed materials and devices during the last decade, particular the polymer version of the materials and devices. The work in this field is exciting and OPV technology is a promising candidate for future thin film solar cells.

1,073 citations

Journal ArticleDOI
Robert A. Street1
TL;DR: In this paper, an intense search has developed for new materials and fabrication techniques that can improve the performance, lower manufacturing cost, and enable new functionality of TFTs, including organic semiconductor, metal oxides, nanowires, printing technology as well as thin-film silicon materials with new properties.
Abstract: Thin-film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that can improve the performance, lower manufacturing cost, and enable new functionality. There are now many new options – organic semiconductor (OSCs), metal oxides, nanowires, printing technology as well as thin-film silicon materials with new properties. All of the new materials have something to offer but none is entirely without technical problems.

530 citations

Journal ArticleDOI
TL;DR: The combination of molecular excitations that can harvest a wide range of photon energies and electronic alloy states that can adjust the open-circuit voltage provides the underlying basis of ternary blends as a platform for highly efficient next-generation organic solar cells.
Abstract: Ternary blend bulk heterojunction organic solar cells comprising either a polythiophene donor and two fullerene acceptors or two polythiophene donors and a fullerene acceptor are shown to have unique electronic properties. Measurements of the photocurrent spectral response and the open-circuit voltage show that the HOMO and LUMO levels change continuously with composition in the respective two-component acceptor or donor pair, consistent with the formation of an organic alloy. However, optical absorption of the exciton states retains the individual molecular properties of the two materials across the blend composition. This difference is attributed to the highly localized molecular nature of the exciton and the more delocalized intermolecular nature of electrons and holes that reflect the average composition of the alloy. As established here, the combination of molecular excitations that can harvest a wide range of photon energies and electronic alloy states that can adjust the open-circuit voltage provides the underlying basis of ternary blends as a platform for highly efficient next-generation organic solar cells.

307 citations

Journal ArticleDOI
Julia R. Greer1, Robert A. Street1
TL;DR: Physical, electrical, and morphological properties of thermally annealed silver nanoparticle thin films are described in this paper, where a phenomenological model predicting optimal pathways to achieve desired electrical performance is proposed.

289 citations

Journal ArticleDOI
TL;DR: In this paper, the authors reported the fabrication of TFT backplanes by using jet printing as the only patterning method, and they used a regioregular polythiophene, poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06cm2∕Vs, on/off ratios of 106, and minimal bias stress.
Abstract: Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128×128 pixel active matrix arrays with 340μm pixel size. The semiconductor used, a regioregular polythiophene, poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene]; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06cm2∕Vs, on/off ratios of 106, and minimal bias stress. The printed TFTs have high yield with a narrow performance distribution. The pixel design benefits from the registration accuracy of jet printing and it is shown that the electrical performance is suitable for addressing capacitive media displays.

279 citations


Cited by
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28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations

Journal ArticleDOI
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Abstract: Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

2,440 citations

Journal ArticleDOI
TL;DR: This Progress Report provides an update on recent developments in inkjet printing technology and its applications, which include organic thin-film transistors, light-emitting diodes, solar cells, conductive structures, memory devices, sensors, and biological/pharmaceutical tasks.
Abstract: In this Progress Report we provide an update on recent developments in inkjet printing technology and its applications, which include organic thin-film transistors, light-emitting diodes, solar cells, conductive structures, memory devices, sensors, and biological/pharmaceutical tasks. Various classes of materials and device types are in turn examined and an opinion is offered about the nature of the progress that has been achieved.

2,019 citations