An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications. Progress in integrating atomically thin two-dimensional materials with silicon-based technology is reviewed, together with the associated opportunities and challenges, and a roadmap for future applications is presented.

Graphene and two-dimensional materials for silicon technology.

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation experiments, we investigate the impact of the rms amplitude /spl Delta/ and the correlation length /spl Lambda/ on the intrinsic parameter fluctuations in well scaled, but simple devices with fixed geometry as well as the channel length and width dependence of the fluctuations at fixed LER parameters. For the first time, we superimpose in the simulations LER and random discrete dopants and investigate their relative contribution to the intrinsic parameter fluctuations in the investigated devices. For particular MOSFET geometries, we were able to identify the regions where each of these two sources of intrinsic parameter fluctuations dominates.

/pdf/intrinsic-parameter-fluctuations-in-decananometer-mosfets-53j6r4ce6g.pdf

Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed.

http://userweb.eng.gla.ac.uk/andrew.brown/papers/IEEE_TED_2003_Review_Paper.pdf

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

This paper evaluates the Raw microprocessor. Raw addresses thechallenge of building a general-purpose architecture that performswell on a larger class of stream and embedded computing applicationsthan existing microprocessors, while still running existingILP-based sequential programs with reasonable performance in theface of increasing wire delays. Raw approaches this challenge byimplementing plenty of on-chip resources - including logic, wires,and pins - in a tiled arrangement, and exposing them through a newISA, so that the software can take advantage of these resources forparallel applications. Raw supports both ILP and streams by routingoperands between architecturally-exposed functional units overa point-to-point scalar operand network. This network offers lowlatency for scalar data transport. Raw manages the effect of wiredelays by exposing the interconnect and using software to orchestrateboth scalar and stream data transport.We have implemented a prototype Raw microprocessor in IBM's180 nm, 6-layer copper, CMOS 7SF standard-cell ASIC process. Wehave also implemented ILP and stream compilers. Our evaluationattempts to determine the extent to which Raw succeeds in meetingits goal of serving as a more versatile, general-purpose processor.Central to achieving this goal is Raw's ability to exploit all formsof parallelism, including ILP, DLP, TLP, and Stream parallelism.Specifically, we evaluate the performance of Raw on a diverse setof codes including traditional sequential programs, streaming applications,server workloads and bit-level embedded computation.Our experimental methodology makes use of a cycle-accurate simulatorvalidated against our real hardware. Compared to a 180 nmPentium-III, using commodity PC memory system components, Rawperforms within a factor of 2x for sequential applications with a verylow degree of ILP, about 2x to 9x better for higher levels of ILP, and10x-100x better when highly parallel applications are coded in astream language or optimized by hand. The paper also proposes anew versatility metric and uses it to discuss the generality of Raw.

/pdf/evaluation-of-the-raw-microprocessor-an-exposed-wire-delay-xbkh9dz129.pdf

Evaluation of the Raw Microprocessor: An Exposed-Wire-Delay Architecture for ILP and Streams

In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased W eff per active footprint and better performance compared to FinFET, and with a less complex patterning strategy, leveraging EUV lithography. Good electrostatics are reported at L g =12nm and aggressive 44/48nm CPP (Contacted Poly Pitch) ground rules. We demonstrate work function metal (WFM) replacement and multiple threshold voltages, compatible with aggressive sheet to sheet spacing for wide stacked sheets. Stiction of sheets in long-channel devices is eliminated. Dielectric isolation is shown on standard bulk substrate for sub-sheet leakage control. Wrap-around contact (WAC) is evaluated for extrinsic resistance reduction.

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

SRAM stability during word line disturb (access disturb) is becoming a key constraint for V/sub DD/ scaling (Burnett, 1994). In this paper we present a design methodology for SRAM stability during access disturb. In this methodology, the SRAM access disturb margin (ADM) is defined as the ratio of the magnitude of the critical current to maintain SRAM stability (I/sub CRIT/) to the sigma of I/sub CRIT/. Using ADM as a figure of merit, this methodology enables one to project the cell stability margin due to process variations, e.g. V/sub T/ variation, during design of a SRAM cell. Using statistical analysis, the required stability margin for an application requirement such as array size and available redundancy can be estimated. Direct cell probing and array test can be used to verify that the stability target is met.

/pdf/sram-cell-design-for-stability-methodology-4xbkys97bm.pdf

SRAM cell design for stability methodology

The present invention relates to a novel semiconductor SRAM cell structure that includes at least two pull-up transistors, two pull-down transistors, and two pass-gate transistors. In one embodiment, an 8T SRAM cell structure implements a series gating feature for implementing Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. Particularly, the 8-T approach adds two pass-gates, two series connected transistor devices connected at complementary nodes of two cross-coupled inverters, to control column select and row (word) select. In the other embodiment, a 9T SRAM cell structure includes a transmission gate to implement Column Select (CS) and Row Select (WL) cell storage access with enhanced stability. The 9-T approach adds three transistors to perform ANDING function to separate the row select and column select signal functions. Both methods improve stability by eliminating half-select mode and facilitate rail to rail data transfer in and out of the SRAM cell without disturbing the other cells.

A novel sram cell design to improve stability

A semiconductor structure and a method for fabricating the semiconductor structure include a first semiconductor fin and a second semiconductor fin of the same overall height over a substrate. Due to the presence of a channel stop layer at the base of one of the first semiconductor fin and the second semiconductor fin, but not the other of the first semiconductor fin and the second semiconductor fin, the first semiconductor fin and the second semiconductor fin have different channel heights. The semiconductor fins may be used to fabricating a corresponding first finFET and a corresponding second finFET with differing performance characteristics due to the different channel heights of the first semiconductor fin and the second semiconductor fin.

Finfet structure including multiple semiconductor fin channel heights

A process for fabricating a high density memory array. N-type impurities are implanted in a p-type substrate to form continuous rails of diffusion that have a substantially flat contour. Each rail of diffusion defines a corresponding bit line. Each rail defines the source and drain region of each pair of adjacent memory array cells associated with the bit line. In one embodiment, multiple layers of polysilicon are utilized to form a control gate, a floating gate, a source and a drain. In another embodiment, multiple layers of polysilicon are utilized to form an auxiliary gate, a floating gate, a source and a drain. In both embodiments, the polysilicon layers self-aligned to substantially reduce polysilicon layer-overlap so as to minimize parasitic capacitances. Domino and Skippy Domino schemes are used to program and read the memory array cells. Programming may be implemented with channel hot-electron tunneling using relatively low programming voltages thereby realizing faster programming time and closer bit-line spacing.

Robert C. Wong

Papers

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

SRAM cell design for stability methodology

A novel sram cell design to improve stability

Finfet structure including multiple semiconductor fin channel heights

Process for making and programming a flash memory array