R
Robert E. Fontana
Researcher at IBM
Publications - 132
Citations - 4874
Robert E. Fontana is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Spin valve. The author has an hindex of 37, co-authored 132 publications receiving 4789 citations.
Papers
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Journal ArticleDOI
Design, fabrication and testing of spin-valve read heads for high density recording
C. Tsang,Robert E. Fontana,Tsann Lin,David Eugene Heim,Virgil Simon Speriosu,Bruce Alvin Gurney,M.L. Williams +6 more
TL;DR: In this article, the spin-valve sensors of the type NiFe/Cu/Co have been designed for optimal biasing behavior and successfully incorporated into a gigabit-type shielded read head configuration with a read trackwidth of 2 /spl mu/m, a read gap of 0.25 /spl µ/m and a MR sensor height of 1 /spl mm/m.
Journal ArticleDOI
Magnetic domain wall motion triggered by an electric current
TL;DR: In this paper, the current-induced propagation of magnetic domain walls was studied in CoFe nanoconstrictions patterned by electron beam lithography and the results confirmed by magnetic force microscopy imaging.
Journal ArticleDOI
Design and operation of spin valve sensors
David Eugene Heim,Robert E. Fontana,C. Tsang,Virgil Simon Speriosu,B.A. Gurney,M.L. Williams +5 more
TL;DR: In this article, two types of patterned, unshielded giant magneto-resistance (GMR) spin valve sensors have been fabricated: nano-layered NiFe/Co/Cu/co/NiFe and simpler NiFe /Cu/Co spin valves.
Patent
Magnetic tunnel junction device with longitudinal biasing
TL;DR: A magnetic tunnel junction device for use as a magnetic memory cell or a magnetic field sensor has one fixed ferromagnetic layer and one sensing magnetometer on opposite sides of the insulating tunnel barrier layer.
Patent
Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor
Robert E. Fontana,Bruce Alvin Gurney,Tsann Lin,Virgil Simon Speriosu,Ching H. Tsang,Dennis R. Wilhoit +5 more
TL;DR: A spin valve magnetoresistive (SVMR) sensor uses a laminated antiparallel (AP) pinned layer in combination with an improved antiferromagnetic (AF) exchange biasing layer as mentioned in this paper.