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Robert Kaplar
Researcher at Sandia National Laboratories
Publications - 151
Citations - 2754
Robert Kaplar is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Diode & Gallium nitride. The author has an hindex of 22, co-authored 128 publications receiving 1956 citations. Previous affiliations of Robert Kaplar include Ohio State University.
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
Arthur J. Fischer,Andrew A. Allerman,Mary H. Crawford,K. H. A. Bogart,S. R. Lee,Robert Kaplar,W.W. Chow,Steven R. Kurtz,K. W. Fullmer,Jeffrey J. Figiel +9 more
TL;DR: In this paper, the active region is composed of three Al0.36Ga0.64N quantum wells with Al 0.48 Ga0.52N barriers for emission at 290 nm.
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An AlN/Al0.85Ga0.15N high electron mobility transistor
Albert G. Baca,Andrew M. Armstrong,Andrew A. Allerman,Erica A. Douglas,Carlos Anthony Sanchez,M. P. King,Michael E. Coltrin,T. R. Fortune,Robert Kaplar +8 more
TL;DR: An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap as discussed by the authors.
Journal ArticleDOI
Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
Robert Kaplar,A. A. Allerman,Andrew M. Armstrong,Mary H. Crawford,Jeramy R. Dickerson,Arthur J. Fischer,Albert G. Baca,Erica A. Douglas +7 more
Journal ArticleDOI
Vertical GaN Power Diodes With a Bilayer Edge Termination
Jeramy R. Dickerson,Andrew A. Allerman,Benjamin N. Bryant,Arthur J. Fischer,M. P. King,Michael W. Moseley,Andrew M. Armstrong,Robert Kaplar,I. C. Kizilyalli,Ozgur Aktas,Jonathan J. Wierer +10 more
TL;DR: In this article, a bilayer edge termination (ET) structure was proposed for GaN power diodes with a low threading dislocation defect density ( $10^{4}-10^{5}$ cm $^{-2}$ ) and a 15-μm-thick n-type drift layer with a free carrier concentration of $5\times 10−15$ cm.