R
Roberto Saletti
Researcher at University of Pisa
Publications - 162
Citations - 2351
Roberto Saletti is an academic researcher from University of Pisa. The author has contributed to research in topics: Battery (electricity) & Voltage. The author has an hindex of 27, co-authored 157 publications receiving 2100 citations.
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Journal ArticleDOI
Performance comparison of active balancing techniques for lithium-ion batteries
TL;DR: In this paper, a simple but effective analysis to calculate the performances achievable by a balancing circuit for series-connected lithium-ion batteries (i.e., the time required to equalise the battery and the energy lost during this process) is described.
Proceedings ArticleDOI
Batteries and battery management systems for electric vehicles
M. Brandl,H. Gall,Martin Wenger,Vincent Lorentz,M. Giegerich,Federico Baronti,G. Fantechi,Luca Fanucci,Roberto Roncella,Roberto Saletti,Sergio Saponara,A. Thaler,M. Cifrain,W. Prochazka +13 more
TL;DR: A general and flexible architecture for battery management implementation and the main techniques for state-of-charge estimation and charge balancing are reported and an innovative BMS is described, which incorporates an almost fully-integrated active charge equalizer.
Journal ArticleDOI
Ultralow-power adiabatic circuit semi-custom design
A. Blotti,Roberto Saletti +1 more
TL;DR: This brief shows that a conventional semi-custom design-flow based on a positive feedback adiabatic logic (PFAL) cell library allows any VLSI designer to design and verify complex adiAbatic systems in a short time and easy way, thus, enjoying the energy reduction benefits of adiABatic logic.
Journal ArticleDOI
High-Efficiency Digitally Controlled Charge Equalizer for Series-Connected Cells Based on Switching Converter and Super-Capacitor
TL;DR: An innovative lithium-battery cell-to-cell active equalizer capable of moving charge between series-connected cells using a super-capacitor as an energy tank and its very high efficiency, which is over 90%.
Journal ArticleDOI
Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodes
TL;DR: In this paper, the behavior of very thin oxide (∼20 A) metaloxide-semiconductor tunnel diodes under high electrical field bias was studied, and the formation of the path was correlated to the presence of multilevel switching fluctuations in the diode current.