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Rodney S. Ruoff

Bio: Rodney S. Ruoff is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene oxide paper. The author has an hindex of 164, co-authored 666 publications receiving 194902 citations. Previous affiliations of Rodney S. Ruoff include Texas State University & North Carolina State University.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the cross-section dependence on the target-ionization potentials is discussed, and a simple over-barrier model is evoked to explain the energy dependences.
Abstract: Electron capture in collisions of C602+ and C603+ molecular ions with atomic and molecular gases has been studied at impact energies around 100 keV. The cross-section dependence on the target-ionization potentials is discussed, and a simple over-barrier model is evoked to explain the energy dependences. The cross sections for endothermic processes are discussed in the light of a simple two-state model, and a general understanding of their behaviour is obtained.

11 citations

Journal ArticleDOI
TL;DR: Textured alumina films have been used to fabricate nanoscale pores in Si3N4 membranes and the nanopores were found to be concentrated in a approximately 150-microm diameter region at the center of the membrane.
Abstract: Textured alumina films have been used to fabricate nanoscale pores in Si3N4 membranes. A few nanometer-thick alumina layer was used as a masking material for nanopore fabrication, and the pattern was transferred into a 100-nm thick, 200 microm x 200 microm Si3N4 membrane by reactive ion etching (RIE). The nanopores were found to be concentrated in a approximately 150-microm diameter region at the center of the membrane.

11 citations

Proceedings ArticleDOI
01 Dec 2012
TL;DR: In this article, the authors reported the state-of-the-art electrical and mechanical properties on flexible substrates, including the highest ON current (∼0.3mA/μm), the first demonstration of current saturation on flexible films and intrinsic gain, and the highest conversion gain flexible graphene frequency doubler.
Abstract: We report graphene field-effect transistors on hexagonal boron nitride, high-k, and polymeric films featuring state-of-the-art electrical and mechanical properties on flexible substrates. The record electrical performance includes the highest ON current (∼0.3mA/μm), the first demonstration of current saturation on flexible films and intrinsic gain, and the highest conversion gain flexible graphene frequency doubler. Extrinsic transit frequency of 2.23GHz, and maximum frequency of 1.15GHz are also achieved. In addition, robust electrical response down to 0.7mm mechanical bending radius is realized.

11 citations

Journal ArticleDOI
TL;DR: In this paper, the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms) were studied using non-local spin transport to directly probe the spin degree of freedom of the defect-induced states.
Abstract: Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.

11 citations


Cited by
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Journal ArticleDOI
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
Abstract: Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

35,293 citations

01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

29,323 citations

28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations

Journal ArticleDOI
Changgu Lee1, Xiaoding Wei1, Jeffrey W. Kysar1, James Hone1, James Hone2 
18 Jul 2008-Science
TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Abstract: We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.

18,008 citations