Rodney S. Ruoff

Bio: Rodney S. Ruoff is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene oxide paper. The author has an hindex of 164, co-authored 666 publications receiving 194902 citations. Previous affiliations of Rodney S. Ruoff include Texas State University & North Carolina State University.

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

Abstract: Despite the widespread interest in graphene electronics over the past decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this article, we report detailed studies on the electrical and mechanical properties of vapor synthesized high-quality monolayer graphene integrated onto flexible polyimide substrates. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobilities of 3900 cm2/V·s, and importantly, 25 GHz cutoff frequency, which is more than a factor of 2.5 times higher than prior results. Mechanical studies reveal robust transistor performance under repeated bending, down to 0.7 mm bending radius, whose tensile strain is a factor of 2–5 times higher than in prior studies. In addition, integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-pas...

Modulus, Fracture Strength, and Brittle vs. Plastic Response of the Outer Shell of Arc-grown Multi-walled Carbon Nanotubes

Abstract: The fracture strengths and elastic moduli of arc-grown multi-walled carbon nanotubes (MWCNTs) were measured by tensile loading inside of a scanning electron microscope (SEM). Eighteen tensile tests were performed on 14 MWCNTs with three of them being tested multiple times (3×, 2×, and 2×, respectively). All the MWCNTs fractured in the “sword-in-sheath” mode. The diameters of the MWCNTs were measured in a transmission electron microscope (TEM), and the outer diameter with an assumed 0.34 nm shell thickness was used to convert measured load-displacement data to stress and strain values. An unusual yielding before fracture was observed in two tensile loading experiments. The 18 outer shell fracture strength values ranged from 10 to 66 GPa, and the 18 Young's modulus values, obtained from a linear fit of the stress–strain data, ranged from 620 to 1,200 GPa, with a mean of 940 GPa. The possible influence of stress concentration at the clamps is discussed.

Single-crystal, large-area, fold-free monolayer graphene.

Abstract: Chemical vapour deposition of carbon-containing precursors on metal substrates is currently the most promising route for the scalable synthesis of large-area, high-quality graphene films1. However, there are usually some imperfections present in the resulting films: grain boundaries, regions with additional layers (adlayers), and wrinkles or folds, all of which can degrade the performance of graphene in various applications2–7. There have been numerous studies on ways to eliminate grain boundaries8,9 and adlayers10–12, but graphene folds have been less investigated. Here we explore the wrinkling/folding process for graphene films grown from an ethylene precursor on single-crystal Cu–Ni(111) foils. We identify a critical growth temperature (1,030 kelvin) above which folds will naturally form during the subsequent cooling process. Specifically, the compressive stress that builds up owing to thermal contraction during cooling is released by the abrupt onset of step bunching in the foil at about 1,030 kelvin, triggering the formation of graphene folds perpendicular to the step edge direction. By restricting the initial growth temperature to between 1,000 kelvin and 1,030 kelvin, we can produce large areas of single-crystal monolayer graphene films that are high-quality and fold-free. The resulting films show highly uniform transport properties: field-effect transistors prepared from these films exhibit average room-temperature carrier mobilities of around (7.0 ± 1.0) × 103 centimetres squared per volt per second for both holes and electrons. The process is also scalable, permitting simultaneous growth of graphene of the same quality on multiple foils stacked in parallel. After electrochemical transfer of the graphene films from the foils, the foils themselves can be reused essentially indefinitely for further graphene growth. Restricting the initial growth temperatures used for chemical vapour deposition of graphene on metal foils produces optimum conditions for growing large areas of fold-free, single-crystal graphene.

Atomistic Simulations of Double-Walled Carbon Nanotubes (DWCNTs) as Rotational Bearings

Abstract: Atomistic simulations of double-walled carbon nanotubes (DWCNTs) as rotational bearings were performed. Molecular mechanics (MM) calculations show that the interlayer energy surface of the bearings is nearly flat. Thermal effects on the bearings were studied with molecular dynamics (MD) simulations at finite temperature. These simulations show that the interlayer corrugation against rotation, and hence the interlayer friction coefficient, is extremely small, suggesting the possible application of DWCNTs as wearless bearings. Extreme operational conditions of the bearings for which the bearings disintegrate are also reported.

Relationship between the Electron Affinities and Half-Wave Reduction Potentials of Fullerenes, Aromatic Hydrocarbons, and Metal Complexes

Abstract: Differences in energy for neutral molecule and negative ions upon going from the gas phase to solution. - {delta}{delta}G{sub sol}, have been calculated from gas phase electron affinites and half-wave reduction potentials for a series of fullerenes, aromatic hydrocarbons, metalloporphyrins, and metal complexes in dimethylformamide (DMF). For those compounds with similar charge delocalization, the value of -{delta}{delta}G{sub sol} is constant and equal to 1.76 {+-} 0.06 eV for the fullerenes, 1.99 {+-} 0.05 eV for the aromatic hydrocarbons and the metalloporphyrins, and 2.19 {+-} 0.14 eV for the metal acetylacetonates. The fullerenes form a new class of molecules in which the charge is highly delocalized, and this is demonstrated by the relatively low value of -{Delta}{Delta}{sub sol}. A procedure for determining adiabatic electron affinities from reduction potentials, and vice versa, is established. This procedure is applied to benzene to give an electron affinity of {minus}0.7 {+-} 0.14 eV, to La @ C{sub 82} to give an electron affinity of 3.21 {+-} 0.06 eV, and to Y @ C{sub 82} to give an electron affinity of 3.32 {+-} 0.06 eV. On the other hand, a value of E{sub 1/2} = 0.09 {+-} 0.14 V vs SCE is predicted for the reductionmore » of Ca@C{sub 60} in DMF based upon a reported electron affinity of 3.0 {+-} 0.1 eV. 36 refs., 4 figs., 3 tabs.« less

The rise of graphene

Abstract: Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

Abstract: We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.