R
Rodney S. Ruoff
Researcher at Ulsan National Institute of Science and Technology
Publications - 689
Citations - 214247
Rodney S. Ruoff is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene oxide paper. The author has an hindex of 164, co-authored 666 publications receiving 194902 citations. Previous affiliations of Rodney S. Ruoff include Texas State University & North Carolina State University.
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Graphene synthesis by chemical vapor deposition
TL;DR: Graphene films can be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C and 1,400° C as discussed by the authors, where the metal or dielectrics is exposed to an organic compound, thereby growing graphene from the organic compound on the surface of the sheet.
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Crystal Structure Evolution of Individual Graphene Islands During CVD Growth on Copper Foil
Yaping Wu,Yaping Wu,Yufeng Hao,Hu Young Jeong,Zonghoon Lee,Shanshan Chen,Wei Jiang,Qingzhi Wu,Richard D. Piner,Junyong Kang,Rodney S. Ruoff +10 more
TL;DR: An observed structure evolution and surface disorder of Cu grains can be possible factors for the formation of grain boundaries within graphene islands.
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Graphene Coatings as Barrier Layers to Prevent the Water-Induced Corrosion of Silicate Glass
TL;DR: The effectiveness of graphene to act as a glass corrosion inhibitor was evaluated by water immersion testing and showed a significant increase in surface roughness and defects, which resulted in a marked reduction in fracture strength.
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Silicon carbide formation by annealing C60 films on silicon
L. Moro,Anumita Paul,Donald C. Lorents,Ripudaman Malhotra,Rodney S. Ruoff,P. Lazzeri,Lia Vanzetti,A. Lui,Shekhar Subramoney +8 more
TL;DR: In this article, a stoichiometric silicon carbide films were grown on (100) silicon substrates by deposition of 200-nm-thick C60 films, followed by annealing.
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What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition?
Ding Yi,Da Luo,Zhu-Jun Wang,Jichen Dong,Xu Zhang,Marc Georg Willinger,Rodney S. Ruoff,Feng Ding +7 more
TL;DR: It is proved that the SB can occur even in the absence of a compressive strain, is enabled by the rapid diffusion of metal adatoms beneath the graphene and is driven by the release of the bending energy of the graphene overlayer in the vicinity of steps.