Roger D. Meredith

TL;DR: In this article, the fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500degC in air ambient is reported.

TL;DR: In this paper, the authors demonstrate longer electrical operation of two silicon carbide (4H-SiC) junction field effect transistor (JFET) ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus' surface atmosphere.

TL;DR: In this paper, the authors report a successful two-month (60-day) operational demonstration of two 175-transistor 4H-SiC junction field effect transistor (JFET) integrated circuits directly exposed (no cooling and no protective chip packaging) to high-fidelity physical and chemical reproduction of Venus surface atmospheric conditions in a test chamber.

TL;DR: In this article, the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6HSiC junction field effect transistors (JFETs) was reported.

TL;DR: In this article, the fabrication and testing of 6H-SiC junction field effect transistors (JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of electrical operation at 500 °C without degradation is described.