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Roger Sanchis-Gual

Researcher at University of Valencia

Publications -  21
Citations -  417

Roger Sanchis-Gual is an academic researcher from University of Valencia. The author has contributed to research in topics: Spin crossover & Layered double hydroxides. The author has an hindex of 8, co-authored 17 publications receiving 233 citations.

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Prussian Blue@MoS2 Layer Composites as Highly Efficient Cathodes for Sodium- and Potassium-Ion Batteries

TL;DR: In this article, the authors acknowledge the financial support from the Spanish MINECO (MAT2014-56143-R co-financed by FEDER and Excellence Unit “Maria de Maeztu”MDM-2015-0538), the EU (ERC Proof of Concept Hy-MAC (713704), 2D-INK- (664878) and ERC Stg Chem-fs-MOF (714122), and the Generalidad Valenciana (Prometeo Program).
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Influence of the Interlayer Space on the Water Oxidation Performance in a Family of Surfactant-Intercalated NiFe-Layered Double Hydroxides

TL;DR: Layered double hydroxides (LDHs) are low-dimensional materials that act as benchmark catalysts for the oxygen evolution reaction (OER), and many LDH properties affecting the OER have been studied to re...
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Liquid phase exfoliation of antimonene: systematic optimization, characterization and electrocatalytic properties

TL;DR: In this article, the authors developed a systematic study of liquid phase exfoliation (LPE) with the aim to optimize antimonene production in terms of concentration and dimensional anisotropy, investigating the most relevant experimental factors affecting the exfolation: preprocessing of pristine antimony, solvent selection based on Hansen solubility parameters and ultrasound conditions.
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Liquid phase exfoliation of carbonate-intercalated layered double hydroxides.

TL;DR: Direct exfoliation of a carbonate layered double hydroxide (LDH) has been achieved by using a novel horn-probe sonic tip, avoiding the development of time-consuming anion-exchange reactions.
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Design of Bistable Gold@Spin-Crossover Core–Shell Nanoparticles Showing Large Electrical Responses for the Spin Switching

TL;DR: A large change in conductance upon spin state switching, as compared with other memory devices based on the pristine SCO NPs, is detected and results in a large improvement in the sensitivity of the device to the spin transition, with values for the ON/OFF ratio which are an order of magnitude better than the best ones obtained in previous SCO devices.