Romain Brenot

Bio: Romain Brenot is an academic researcher from Huawei. The author has contributed to research in topics: Optical amplifier & Wavelength-division multiplexing. The author has an hindex of 29, co-authored 276 publications receiving 3472 citations. Previous affiliations of Romain Brenot include École Polytechnique & Nokia.

Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$ m

Abstract: This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 mum. These two types of QDs can provide high gain and low losses. Continuous-wave (CW) room-temperature lasing operation on ground state of cavity length as short as 200 mum has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad-area (BA) lasers, and of 80 K for single-transverse-mode lasers in the temperature range between 25degC and 85degC. Buried ridge stripe (BRS)-type single-mode distributed feedback (DFB) lasers are also demonstrated for the first time, exhibiting a side-mode suppression ratio (SMSR) as high as 45 dB. Such DFB lasers allow the first floor-free 10-Gb/s direct modulation for back-to-back and transmission over 16-km standard optical fiber. In addition, novel results are given on gain, noise, and four-wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD Fabry-Perot (FP) lasers, owing to the small confinement factor and the three-dimensional (3-D) quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time-jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step toward the application of QD lasers and amplifiers to the field of optical fiber communications

Optical fiber solution for mobile fronthaul to achieve cloud radio access network

Abstract: This paper describes the technical aspects of optical access solutions for mobile fronthaul application. The mobile context and main constraints of fronthaul signals are presented. The need for a demarcation point between the Mobile operator and the Fiber provider is introduced. The optical solution to achieve such a network is discussed. A WDM network with passive monitoring at the antenna site and automatic wavelength assignment is proposed based on self-seeded solution.

First 100-nm Continuous-Band WDM Transmission System with 115Tb/s Transport over 100km Using Novel Ultra-Wideband Semiconductor Optical Amplifiers

Abstract: We demonstrate the first 115Tb/s lumped amplified transmission system based on novel ultrawideband semiconductor optical amplifiers. We show the successful transmission of 250 channels carrying >400Gb/s each over a 100-km transmission link.

Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films

Abstract: The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H deposition by hot wire chemical vapor deposition, the surface reaction probability (β=0.29) of the depositing radical is compatible with SiH3, whereas the surface reaction probability in microcrystalline silicon growth is higher (0.36⩽β⩽0.54). On the contrary, the deposition of amorphous silicon by plasma enhanced chemical vapor deposition indicates the contribution of more reactive radicals than SiH3. The deposition of polymorphous and microcrystalline silicon by plasma is dominated by ions, which can contribute up to 70% of the deposited film. This is attributed to efficient ionization of silane in charge exchange reactions with hydrogen ions. The surface reaction probability in the case of polymorphous silicon de...

Experimental demonstration of 10 Gbit/s upstream transmission by remote modulation of 1 GHz RSOA using Adaptively Modulated Optical OFDM for WDM-PON single fiber architecture

Abstract: We experimentally demonstrate the use of AMOOFDM format for remote modulation of low-bandwidth RSOA as a cost effective solution for 10 Gbit/s upstream transmission in 20 km single fiber WDM-PON architecture.

Microresonator-based solitons for massively parallel coherent optical communications

Abstract: Solitons are waveforms that preserve their shape while propagating, as a result of a balance of dispersion and nonlinearity. Soliton-based data transmission schemes were investigated in the 1980s and showed promise as a way of overcoming the limitations imposed by dispersion of optical fibres. However, these approaches were later abandoned in favour of wavelength-division multiplexing schemes, which are easier to implement and offer improved scalability to higher data rates. Here we show that solitons could make a comeback in optical communications, not as a competitor but as a key element of massively parallel wavelength-division multiplexing. Instead of encoding data on the soliton pulse train itself, we use continuous-wave tones of the associated frequency comb as carriers for communication. Dissipative Kerr solitons (DKSs) (solitons that rely on a double balance of parametric gain and cavity loss, as well as dispersion and nonlinearity) are generated as continuously circulating pulses in an integrated silicon nitride microresonator via four-photon interactions mediated by the Kerr nonlinearity, leading to low-noise, spectrally smooth, broadband optical frequency combs. We use two interleaved DKS frequency combs to transmit a data stream of more than 50 terabits per second on 179 individual optical carriers that span the entire telecommunication C and L bands (centred around infrared telecommunication wavelengths of 1.55 micrometres). We also demonstrate coherent detection of a wavelength-division multiplexing data stream by using a pair of DKS frequency combs-one as a multi-wavelength light source at the transmitter and the other as the corresponding local oscillator at the receiver. This approach exploits the scalability of microresonator-based DKS frequency comb sources for massively parallel optical communications at both the transmitter and the receiver. Our results demonstrate the potential of these sources to replace the arrays of continuous-wave lasers that are currently used in high-speed communications. In combination with advanced spatial multiplexing schemes and highly integrated silicon photonic circuits, DKS frequency combs could bring chip-scale petabit-per-second transceivers into reach.

A Survey on Low Latency Towards 5G: RAN, Core Network and Caching Solutions

Abstract: The fifth generation (5G) wireless network technology is to be standardized by 2020, where main goals are to improve capacity, reliability, and energy efficiency, while reducing latency and massively increasing connection density. An integral part of 5G is the capability to transmit touch perception type real-time communication empowered by applicable robotics and haptics equipment at the network edge. In this regard, we need drastic changes in network architecture including core and radio access network (RAN) for achieving end-to-end latency on the order of 1 ms. In this paper, we present a detailed survey on the emerging technologies to achieve low latency communications considering three different solution domains: 1) RAN; 2) core network; and 3) caching. We also present a general overview of major 5G cellular network elements such as software defined network, network function virtualization, caching, and mobile edge computing capable of meeting latency and other 5G requirements.

Plasma deposition of optical films and coatings: A review

Abstract: Plasma enhanced chemical vapor deposition(PECVD) is being increasingly used for the fabrication of transparent dielectric optical films and coatings. This involves single-layer, multilayer, graded index, and nanocomposite optical thin filmsystems for applications such as optical filters, antireflective coatings, optical waveguides, and others. Beside their basic optical properties (refractive index, extinction coefficient, optical loss), these systems very frequently offer other desirable “functional” characteristics. These include hardness, scratch, abrasion, and erosion resistance, improved adhesion to various technologically important substrate materials such as polymers, hydrophobicity or hydrophilicity, long-term chemical, thermal, and environmental stability, gas and vapor impermeability, and others. In the present article, we critically review the advances in the development of plasma processes and plasmasystems for the synthesis of thin film high and low index optical materials, and in the control of plasma–surface interactions leading to desired film microstructures. We particularly underline those specificities of PECVD, which distinguish it from other conventional techniques for producing optical films (mainly physical vapor deposition), such as fabrication of graded index (inhomogeneous) layers, control of interfaces, high deposition rate at low temperature, enhanced mechanical and other functional characteristics, and industrial scaleup. Advances in this field are illustrated by selected examples of PECVD of antireflective coatings, rugate filters, integrated optical devices, and others.

An introduction to InP-based generic integration technology

Abstract: Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets. Recently, a novel approach in photonic integration is emerging which will reduce the R&D and prototyping costs and the throughput time of PICs by more than an order of magnitude. It will bring the application of PICs that integrate complex and advanced photonic functionality on a single chip within reach for a large number of small and larger companies and initiate a breakthrough in the application of Photonic ICs. The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.

OFDM for Next-Generation Optical Access Networks

Abstract: In this tutorial overview, the principles, advantages, challenges, and practical requirements of optical orthogonal frequency division multiplexing (OFDM)-based optical access are presented, with an emphasis on orthogonal frequency division multiple access (OFDMA) for application in next-generation passive optical networks (PON). General OFDM principles, including orthogonality, cyclic prefix use, frequency-domain equalization, and multiuser OFDMA are summarized, followed by an overview of various optical OFDM(A) transceiver architectures for next-generation PON. Functional requirements are outlined for high-speed digital signal processors (DSP) and data converters in OFDMA-PON. A techno-economic outlook for such a “software-defined,” DSP-based optical access platform is also provided.