R
Roman Sordan
Researcher at Polytechnic University of Milan
Publications - 75
Citations - 5042
Roman Sordan is an academic researcher from Polytechnic University of Milan. The author has contributed to research in topics: Graphene & Transistor. The author has an hindex of 24, co-authored 72 publications receiving 4359 citations. Previous affiliations of Roman Sordan include Max Planck Society & University of Novi Sad.
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
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Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics.
Tian Carey,Stefania Cacovich,Giorgio Divitini,Jiesheng Ren,Jiesheng Ren,Aida Mansouri,Jong Min Kim,Chaoxia Wang,Caterina Ducati,Roman Sordan,Felice Torrisi +10 more
TL;DR: In this paper, the authors demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks.
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Carbon nanotube memory devices of high charge storage stability
TL;DR: In this article, a molecular memory device with semiconducting single-walled carbon nanotubes constituting a channel of 150 nm in length is described, and data storage is achieved by sweeping gate voltages in the range of 3 V, associated with a storage stability of more than 12 days at room temperature.
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Logic gates with a single graphene transistor
TL;DR: In this paper, the operation of four basic two-input logic gates fabricated with a single graphene transistor is demonstrated, and the merits and limitations of the fabricated gates are assessed by comparing their performance with that of conventional logic gates.
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Integrated complementary graphene inverter
TL;DR: In this article, the operation of a digital logic inverter consisting of one p-and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated.