R
Roy Edwin Scheuerlein
Researcher at IBM
Publications - 43
Citations - 3612
Roy Edwin Scheuerlein is an academic researcher from IBM. The author has contributed to research in topics: Sense amplifier & Tunnel magnetoresistance. The author has an hindex of 22, co-authored 43 publications receiving 3552 citations.
Papers
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Journal ArticleDOI
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
Stuart S. P. Parkin,Kevin P. Roche,Mahesh G. Samant,P. M. Rice,Robert Beyers,Roy Edwin Scheuerlein,Eugene J. O'Sullivan,Stephen L. Brown,J. Bucchigano,D. W. Abraham,Yu Lu,M. Rooks,Philip L. Trouilloud,R. A. Wanner,William J. Gallagher +14 more
TL;DR: In this paper, exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture, which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2.
Patent
Magnetic memory array using magnetic tunnel junction devices in the memory cells
TL;DR: In this article, a nonvolatile magnetic random access memory (MRAM) is proposed, where each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series.
Proceedings ArticleDOI
A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
Roy Edwin Scheuerlein,William J. Gallagher,Stuart S. P. Parkin,A. Lee,S. Ray,R. P. Robertazzi,William Robert Reohr +6 more
TL;DR: The magnetic tunnel junction (MTJ) MRAM is dramatically different and achieves four orders of magnitude better bandwidth to sense power ratio by utilizing a high resistance and high magneto-resistance (MR) MTJ and including a FET switch in each cell.
Patent
Voltage biasing for magnetic ram with magnetic tunnel memory cells
TL;DR: In this article, a nonvolatile memory array includes a substrate, a first plurality of electrically conductive traces formed on the substrate and overlapping the first plurality at a plurality of intersection regions.
Journal ArticleDOI
Magnetization Reversal in Micron-Sized Magnetic Thin Films
Roger H. Koch,J. G. Deak,David W. Abraham,Philip L. Trouilloud,R. A. Altman,Yu Lu,William J. Gallagher,Roy Edwin Scheuerlein,Kevin P. Roche,Stuart S. P. Parkin +9 more
TL;DR: In this paper, the authors measured and simulated the dynamics of magnetization reversal in 5 nm by 0.8 by 1.6 µm thin films with spin-polarized tunnel junction and showed that the magnetization direction of the film can be probed by measuring the tunneling resistance of the junction.