Russell D. Dupuis

Bio: Russell D. Dupuis is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Heterojunction. The author has an hindex of 46, co-authored 441 publications receiving 9383 citations. Previous affiliations of Russell D. Dupuis include University of Texas at Austin & Lawrence Berkeley National Laboratory.

GaN avalanche photodiodes

Abstract: We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas.

Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

Abstract: Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor−liquid−solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at ∼378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

Abstract: This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1- xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of InxGa1- xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of InxGa1- xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

Abstract: [∗] S. Xu , C. Xu , Y. Liu , Y. F. Hu , R. S. Yang , Q. Yang , Prof. Z. L. Wang School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia, 30332–0245 (USA) E-mail: zlwang@gatech.edu J. H. Ryou , H. J. Kim , Z. Lochner , S. Choi , Prof. R. Dupuis School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta, Georgia, 30332–0245 (USA) ZnO-based light emitting diodes (LEDs) have been considered as a potential candidate for the next generation of blue/ near-UV light sources, [ 1 ] due to a direct wide bandgap energy of 3.37 eV, a large exciton binding energy of 60 meV at room temperature, and several other manufacturing advantages of ZnO. [ 2 ] While the pursuit of stable and reproducible p-ZnO is still undergoing, [ 3,4 ] heterojunctions of n-ZnO and p-GaN are employed as an alternative approach in this regard by considering the similar crystallographic and electronic properties of ZnO and GaN. [ 5–7 ] Compared with the thin fi lm/thin fi lm LEDs, [ 5,6 , 8 ] which may suffer from the total internal refl ection, n-ZnO nanowire/p-GaN thin fi lm heterostructures are utilized in order to increase the extraction effi ciency of the LEDs by virtue of the waveguiding properties of the nanowires. [ 9–11 ] But in all of these cases, the n-ZnO nanowires are randomly distributed on the substrate, which largely limits their applications in high performance optoelectronic devices. Here in this work, we demonstrate the capability of controlling the spatial distribution of the blue/near-UV LEDs composed of position controlled arrays of n-ZnO nanowires on a p-GaN thin fi lm substrate. The device was fabricated by a conjunction of low temperature wet chemical methods and electron beam lithography (EBL). The EBL could be replaced by other more convenient patterning techniques, such as photolithography and nanosphere lithography, rendering our technique low cost and capable of scaling up easily. Under forward bias, each single nanowire is a light emitter. By Gaussian deconvolution of the emission spectrum, the origins of the blue/nearUV emission are assigned particularly to three distinct electronhole recombination processes. By virtue of the nanowire/thin fi lm heterostructures, these LEDs give an external quantum effi ciency of 2.5%. This approach has great potential applications in high resolution electronic display, optical interconnect, and high density data storage. The design of the LED is shown in Figure 1a . Ordered ZnO nanowire arrays were grown on p-GaN (Figure 1 b–d), [ 12–14 ]

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

Abstract: We report on the material, electrical, and optical properties of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled current transport in the 1.5 μm devices using thermionic field emission theory, and in the 4.0 μm devices using thermionic emission theory. We have obtained a good fit to the experimental data. Upon repeated field stressing of the 1.5 μm devices, there is a degradation in the current–voltage (I–V) characteristics that is trap related. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented based on experimental results. For devices fabricated on wafers with very low background free electron concentrations, there is a characteristic “punch-through” voltage, which we attribute to the interaction of the depletion ...

Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

Abstract: We have converted nanoscale mechanical energy into electrical energy by means of piezoelectric zinc oxide nanowire (NW) arrays. The aligned NWs are deflected with a conductive atomic force microscope tip in contact mode. The coupling of piezoelectric and semiconducting properties in zinc oxide creates a strain field and charge separation across the NW as a result of its bending. The rectifying characteristic of the Schottky barrier formed between the metal tip and the NW leads to electrical current generation. The efficiency of the NW-based piezoelectric power generator is estimated to be 17 to 30%. This approach has the potential of converting mechanical, vibrational, and/or hydraulic energy into electricity for powering nanodevices.

Band parameters for III–V compound semiconductors and their alloys

Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

First-principles calculations for defects and impurities: Applications to III-nitrides

Abstract: First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be a...

Direct-current nanogenerator driven by ultrasonic waves

Abstract: We have developed a nanowire nanogenerator that is driven by an ultrasonic wave to produce continuous direct-current output. The nanogenerator was fabricated with vertically aligned zinc oxide nanowire arrays that were placed beneath a zigzag metal electrode with a small gap. The wave drives the electrode up and down to bend and/or vibrate the nanowires. A piezoelectric-semiconducting coupling process converts mechanical energy into electricity. The zigzag electrode acts as an array of parallel integrated metal tips that simultaneously and continuously create, collect, and output electricity from all of the nanowires. The approach presents an adaptable, mobile, and cost-effective technology for harvesting energy from the environment, and it offers a potential solution for powering nanodevices and nanosystems.