The interaction of subpicosecond laser pulses with magnetically ordered materials has developed into a fascinating research topic in modern magnetism. From the discovery of subpicosecond demagnetization over a decade ago to the recent demonstration of magnetization reversal by a single 40 fs laser pulse, the manipulation of magnetic order by ultrashort laser pulses has become a fundamentally challenging topic with a potentially high impact for future spintronics, data storage and manipulation, and quantum computation. Understanding the underlying mechanisms implies understanding the interaction of photons with charges, spins, and lattice, and the angular momentum transfer between them. This paper will review the progress in this field of laser manipulation of magnetic order in a systematic way. Starting with a historical introduction, the interaction of light with magnetically ordered matter is discussed. By investigating metals, semiconductors, and dielectrics, the roles of nearly free electrons, charge redistributions, and spin-orbit and spin-lattice interactions can partly be separated, and effects due to heating can be distinguished from those that are not. It will be shown that there is a fundamental distinction between processes that involve the actual absorption of photons and those that do not. It turns out that for the latter, the polarization of light plays an essential role in the manipulation of the magnetic moments at the femtosecond time scale. Thus, circularly and linearly polarized pulses are shown to act as strong transient magnetic field pulses originating from the nonabsorptive inverse Faraday and inverse Cotton-Mouton effects, respectively. The recent progress in the understanding of magneto-optical effects on the femtosecond time scale together with the mentioned inverse, optomagnetic effects promises a bright future for this field of ultrafast optical manipulation of magnetic order or femtomagnetism.

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Ultrafast optical manipulation of magnetic order

Although high-speed all-optical switches are expected to replace their electrical counterparts in information processing, their relatively large size and power consumption have remained obstacles. We use a combination of an ultrasmall photonic-crystal nanocavity and strong carrier-induced nonlinearity in InGaAsP to successfully demonstrate low-energy switching within a few tens of picoseconds. Switching energies with a contrast of 3 and 10 dB of 0.42 and 0.66 fJ, respectively, have been obtained, which are over two orders of magnitude lower than those of previously reported all-optical switches. The ultrasmall cavity substantially enhances the nonlinearity as well as the recovery speed, and the switching efficiency is maximized by a combination of two-photon absorption and linear absorption in the InGaAsP nanocavities. These switches, with their chip-scale integratability, may lead to the possibility of low-power, high-density, all-optical processing in a chip. All-optical switching energies as small as 0.42 fJ — two orders of magnitude lower than previously reported — are demonstrated in small photonic crystal cavities incorporating InGaAsP. These devices can switch within a few tens of picoseconds, and may therefore have potential for low-power high-density all-optical processing on a chip.

Sub-femtojoule all-optical switching using a photonic-crystal nanocavity

Quantum cascade (`QC') lasers are reviewed. These are semiconductor injection lasers based on intersubband transitions in a multiple-quantum-well (QW) heterostructure, designed by means of band-structure engineering and grown by molecular beam epitaxy. The intersubband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range unrelated to the material's energy bandgap. Second, a cascade process in which multiple - often several tens of - photons are generated per electron becomes feasible, as the electron remains inside the conduction band throughout its traversal of the active region. This cascading process is behind the intrinsic high-power capabilities of the lasers. Finally, intersubband transitions are characterized through an ultrafast carrier dynamics and the absence of the linewidth enhancement factor, with both features being expected to have significant impact on laser performance. The first experimental demonstration by Faist et al in 1994 described a QC-laser emitting at 4.3 µm wavelength at cryogenic temperatures only. Since then, the lasers' performance has greatly improved, including operation spanning the mid- to far-infrared wavelength range from 3.5 to 24 µm, peak power levels in the Watt range and above-room-temperature (RT) pulsed operation for wavelengths from 4.5 to 16 µm. Three distinct designs of the active region, the so-called `vertical' and `diagonal' transition as well as the `superlattice' active regions, respectively, have emerged, and are used either with conventional dielectric or surface-plasmon waveguides. Fabricated as distributed feedback lasers they provide continuously tunable single-mode emission in the mid-infrared wavelength range. This feature together with the high optical peak power and RT operation makes QC-lasers a prime choice for narrow-band light sources in mid-infrared trace gas sensing applications. Finally, a manifestation of the high-speed capabilities can be seen in actively and passively mode-locked QC-lasers, where pulses as short as a few picoseconds with a repetition rate around 10 GHz have been measured.

https://iopscience.iop.org/article/10.1088/0034-4885/64/11/204/pdf

Recent progress in quantum cascade lasers and applications

Spin dynamics in semiconductors

This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.

We have developed a Mach-Zehnder interferometric all-optical switch employing intersubband transition in an InGaAs∕AlAs∕AlAsSb-coupled double quantum well waveguide. The recently discovered cross-phase modulation phenomenon was utilized as the switching mechanism; the nonlinear index of refraction for transverse electric polarized light is induced by intersubband optical excitation using transverse magnetic pump light. We demonstrate the demultiplexing operation of 160Gbit∕s data signals to 10Gbit∕s using this switch. At the input control pulse energy of 8pJ, the demultiplexed signals showed an extinction ratio better than 10dB, and an error-free demultiplexing was achieved.

All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well

We report photoinduced electron intersubband absorption in ZnSe/BeTe type-II superlattices. The wavelength of the intersubband transition as short as 1.6 μm, covering the 1.55 μm optical communication wavelengths within its absorption band width (∼250 nm), is achieved in the ZnSe/BeTe SLs with 4.5 ML-thick ZnSe layers. The intensity in photoinduced intersubband absorption increases sublinearly with pump intensity, reflecting the characteristic recombination processes of electron-hole pairs in a heterostructure with type-II band alignment.

Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices

Ultrafast all-optical switching at an optical communication wavelength has been investigated by utilizing an intersubband transition (ISBT) of II–VI-based multiple quantum wells (MQWs) fabricated in high-mesa waveguide devices. The waveguide structure consists of a CdS∕ZnSe∕BeTe MQW core layer and two top and bottom ZnMgBeSe quaternary cladding layers grown by molecular beam epitaxy on a (001) GaAs substrate. A marked increase in waveguide transmittance was observed only for transverse-magnetic-polarized subpicosecond pulse with increasing incident pulse energy at λ=1.57μm, indicative of the ISBT absorption saturation. The pulse energy necessary for a 10dB transmittance increase is as low as 13.3pJ for a waveguide device with 2.7μm mesa, and the saturation pulse energy can be even further reduced by employing a narrower mesa structure. Ultrafast gate switching within a time window of 0.56ps was also demonstrated with pump pulse at λ=1.57μm and probe pulse at λ=1.63μm in this waveguide device.

Subpicosecond saturation of intersubband absorption in (CdS∕ZnSe)∕BeTe quantum-well waveguides at telecommunication wavelength

We report on intersubband (ISB) absorption and ultrafast ISB energy relaxation of carriers in n-type doped (CdS/ZnSe)/BeTe quantum wells (QWs), grown by molecular-beam epitaxy. The highly n-type doped QW samples were obtained by introducing a few monolayer CdS into a ZnSe/BeTe QW, and ISB absorption with a peak wavelength as short as 1.62 μm, covering 1.55 μm within its absorption bandwidth, was achieved. The ISB carrier relaxation was investigated by means of femtosecond (∼150 fs) one-color pump and probe technique at the ISB absorption peak. The ISB carrier relaxation time of 270 fs was observed in the sample with the absorption peak at 1.82 μm. The slow decay component with a time constant of a few ps, which has been observed in ZnSe/BeTe QWs, was not observed in the (CdS/ZnSe)/BeTe QWs, indicating that the Γ(ZnSe)–X(BeTe) electron transfer is suppressed, as expected from the band alignment.

Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells

A 3-D polarizing beam splitter based on a silicon nitride (Si3N4) vertical directional coupler is experimentally demonstrated. A new planarization technique by incorporating conventional chemical-mechanical lapping with a dry-etching process is developed, in order to obtain a flat film surface for the second Si3N4 core deposition after the first-layer waveguide is formed. Both the Si3N4 layer thicknesses are 200 nm. As there is a material refractive index mismatch between the vertically separated waveguides, the polarization splitter can be realized with a bottom waveguide width of 1.55 μm and a top core width of 1.35 μm. The transverse electric (TE) polarized light can be transmitted completely to the cross-layer output-port, whereas the transverse magnetic (TM) polarized wave outputs mostly from the port at the input layer. A high-extinction ratio and a wide operation bandwidth can be achieved. An extinction ratio of 26 dB for the cross-layer output-port at 1550-nm wavelength and that of 16 dB for the input-layer output-port are obtained. There is an excess coupling loss of for the TE light, but a 1-dB loss for the TM wave.

Ryoichi Akimoto

Papers

All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well

Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices

Subpicosecond saturation of intersubband absorption in (CdS∕ZnSe)∕BeTe quantum-well waveguides at telecommunication wavelength

Sub-picosecond electron relaxation of near-infrared intersubband transitions in n-doped (CdS/ZnSe)/BeTe quantum wells

A Three-Dimensional Silicon Nitride Polarizing Beam Splitter