S. A. Dvoretsky

Bio: S. A. Dvoretsky is an academic researcher from Tomsk State University. The author has contributed to research in topics: Molecular beam epitaxy & Topological insulator. The author has an hindex of 17, co-authored 94 publications receiving 1130 citations.

Growth of HgTe Quantum Wells for IR to THz Detectors

Abstract: We zone-engineered HgCdTe/HgTe/HgCdTe quantum wells (QWs) using the molecular-beam epitaxy (MBE) method with in situ high-precision ellipsometric control of composition and thickness. The variations of ellipsometric parameters in the ψ–Δ plane were represented by smooth broken curves during HgTe QW growth with abrupt composition changes. The form of the spiral fragments and their extensions from fracture to fracture revealed the growing layer composition and its thickness. Single and multiple (up to 30) Cd x Hg1−x Te/HgTe/Cd x Hg1−x Te QWs with abrupt changes of composition were grown reproducibly on (013) GaAs substrates. HgTe thickness was in the range of 16 nm to 22 nm, with the central portion of Cd x Hg1−x Te spacers doped by In to a concentration of 1014 cm−3 to 1017 cm−3. Based on this research, high-quality (013)-grown HgTe QW structures can be used for all-electric detection of radiation ellipticity in a wide spectral range, from far-infrared (terahertz radiation) to mid-infrared wavelengths. Detection was demonstrated for various low-power continuous-wave (CW) lasers and high-power THz pulsed laser systems.

Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film

Abstract: We report on the observation of cyclotron-resonance-induced photocurrents, excited by continuous wave terahertz radiation, in a three-dimensional topological insulator (TI) based on an 80-nm strained HgTe film. The analysis of the photocurrent formation is supported by complementary measurements of magnetotransport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample, we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages, we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR-assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the cyclotron masses and the mobility of two-dimensional Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band.

Giant photocurrents in a Dirac fermion system at cyclotron resonance

Abstract: We report on the observation of the giant photocurrents in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. At an exciting QW of 6.6 nm width by terahertz (THz) radiation and sweeping magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (−0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical doping. The photocurrent data, accompanied by measurements of radiation transmission as well as Shubnikov–de Haas and quantum Hall effects, prove that the photocurrent is caused by cyclotron resonance in a Dirac fermion system, which allows us to obtain the effective electron velocity v≈7.2×105 m/s. We develop a microscopic theory of the effect and show that the inherent spin-dependent asymmetry of light-matter coupling in the system of Dirac fermions causes the electric current to flow.

Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film

Abstract: We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of $\ensuremath{\mu}\ensuremath{\sim}4\ifmmode\times\else\texttimes\fi{}1{0}^{5}\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\ifmmode\cdot\else\textperiodcentered\fi{}\mathrm{s}$. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac electrons to the conductivity. The results are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of $\ensuremath{\approx}15\text{ }\text{ }\mathrm{meV}$ and gapless surface states.

Photogalvanic probing of helical edge channels in two-dimensional HgTe topological insulators

Abstract: We report on the observation of a circular photogalvanic current excited by terahertz laser radiation in helical edge channels of two-dimensional (2D) HgTe topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from a right-handed to a left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a approximate to 3 mu m distance at CNP approaches 2e(2)/ h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with experimental data.

Colloquium : Topological band theory

Abstract: First-principles band theory, properly augmented by topological considerations, has provided a remarkably successful framework for predicting new classes of topological materials. This Colloquium discusses the underpinnings of the topological band theory and its materials applications.

The 2016 terahertz science and technology roadmap

Abstract: Science and technologies based on terahertz frequency electromagnetic radiation (100 GHz–30 THz) have developed rapidly over the last 30 years. For most of the 20th Century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists. Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to 'real world' applications. For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners. While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing. At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field. The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2017, and provide an opinion on the challenges and opportunities that the future holds. To be able to achieve this aim, we have invited a group of international experts to write 18 sections that cover most of the key areas of THz science and technology. We hope that The 2017 Roadmap on THz science and technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established. We also feel that this review should serve as a useful guide for government and funding agencies.

Direct visualization of current-induced spin accumulation in topological insulators.

Abstract: Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-orbitronics and efficient magnetization manipulation. Here we report the direct spatial imaging of current-induced spin accumulation at the channel edges of Bi2Se3 and BiSbTeSe2 topological insulators as well as Pt by a scanning photovoltage microscope at room temperature. The spin polarization is along the out-of-plane direction with opposite signs for the two channel edges. The accumulated spin direction reverses sign upon changing the current direction and the detected spin signal shows a linear dependence on the magnitude of currents, indicating that our observed phenomena are current-induced effects. The spin Hall angle of Bi2Se3, BiSbTeSe2, and Pt is determined to be 0.0085, 0.0616, and 0.0085, respectively. Our results open up the possibility of optically detecting the current-induced spin accumulations, and thus point towards a better understanding of the interaction between spins and circularly polarized light.