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S. Baba

Bio: S. Baba is an academic researcher from University of Tokyo. The author has contributed to research in topics: Thin film & Adhesion. The author has an hindex of 15, co-authored 35 publications receiving 573 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the average internal stress measured by the cantilever method was 5 x 108N m−2 compression, and the dependence of the size of the wrinkles on the film thickness was deduced and compared with experimental results.

109 citations

Journal ArticleDOI
TL;DR: In this paper, the mechanical properties of coatings of MgF2, carbon and boron were investigated and it was found that exposure of the coatings to the atmosphere was essential to the initiation of the wrinkles.

53 citations

Journal ArticleDOI
Y. Ushio1, T. Banno1, N. Matuda2, Yoshio Saito2, S. Baba1, Akira Kinbara1 
TL;DR: In this paper, the secondary electron emission yield induced by argon ions was measured in an argon plasma with respect to which an electrode carrying an MgO film was biased negatively and the value of γ was very small for the sputter-deposited films, whereas that for EBE films was evaluated to be about 5.

48 citations

Journal ArticleDOI
TL;DR: In this paper, high energy electron diffraction and resistivity measurements were performed on an In/Si(111) system and it was found that the 1 × 1 area moves in an electric field like a positive carrier with a much higher mobility than that of conventional electromigration.

44 citations

Journal ArticleDOI
TL;DR: In this article, a pattern overlapping √ 31 + √31, observed in the desorption process, is interpreted as a fluctuation phenomenon caused by a finite interaction range of indium adatoms on silicon (111) surfaces.

31 citations


Cited by
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Book
02 Feb 2004
TL;DR: The role of stress in mass transport is discussed in this article, where the authors consider anisotropic and patterned films, buckling, bulging, peeling and fracture.
Abstract: 1. Introduction and overview 2. Film stress and substrate curvature 3. Stress in anisotropic and patterned films 4. Delamination and fracture 5. Film buckling, bulging and peeling 6. Dislocation formation in epitaxial systems 7. Dislocation interactions and strain relaxation 8. Equilibrium and stability of surfaces 9. The role of stress in mass transport.

1,562 citations

Book
29 Apr 2010
TL;DR: Physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing is discussed in this paper.
Abstract: This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

783 citations

Journal ArticleDOI
C.A. Davis1
TL;DR: In this paper, a simple model was proposed to explain the formation of compressive stress in thin films deposited with simultaneous bombardment by energetic ions or atoms, and it was shown that the stress σ is proportional to [ Y (1-v) ]E 1 2 (R j+kE 5 3 ), where E is the ion energy, R the net depositing flux, j the bombarding flux, k a material dependent parameter, Y the film material Young's modulus and v the Poisson ratio.

728 citations

Journal ArticleDOI
Henry Windischmann1
TL;DR: A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Abstract: A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...

584 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used a combination of fracture mechanics and post-buckling theory to analyze the mechanics of delamination and spelling of pre-compressed films and indented coatings.

553 citations