Author
S. Banyoudeh
Bio: S. Banyoudeh is an academic researcher from University of Kassel. The author has contributed to research in topics: Quantum dot laser & Quantum dot. The author has an hindex of 7, co-authored 14 publications receiving 127 citations.
Topics: Quantum dot laser, Quantum dot, Quantum well, Laser, Optical amplifier
Papers
More filters
••
TL;DR: Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated and the impact of the active region design and the cavity length on the temperature stability was shown.
Abstract: Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit improved temperature stability and record-high modulation characteristics. Detailed results are shown for the temperature dependence of static properties including threshold current, voltage-current characteristics, external differential efficiency and emission wavelength. Similarly, small and large signal modulations were found to have only minor dependences on temperature. Moreover, we show the impact of the active region design and the cavity length on the temperature stability. Measurements were performed in pulsed and continuous wave operation. High characteristic temperatures for the threshold current were obtained with T0 values of 144 K (15 - 60 °C), 101 K (60 - 110 °C) and 70 K up to 180 °C for a 900-µm-long RWG laser comprising 8 QD layers. The slope efficiency in these lasers is nearly independent of temperature showing a T1 value of more than 900 K up to 110 °C. Due to the high modal gain, lasers with a cavity length of 340 µm reached new record modulation bandwidths of 17.5 GHz at 20 °C and 9 GHz at 80 °C, respectively. These lasers were modulated at 26 GBit/s in the non-return to zero format at 80 °C and at 25 GBaud using a four-level pulse amplitude format at 21 °C.
46 citations
••
TL;DR: In this paper, self-assembled InAs quantum dots (QDs) were grown by solid source molecular beam epitaxy and the impact of growth parameters like the growth temperature of the InGaAlAs nucleation layer, V/III ratio and growth rate during growth of QD layers were carefully investigated by using atomic force microscopy and photoluminescence spectroscopy.
36 citations
••
TL;DR: In this article, the modulation properties and temperature stability of short cavity ridge waveguide lasers based on high-quality InAs quantum dots exhibiting a total modal gain of ~90 cm at room temperature and up to 36 mW are reported.
Abstract: Modulation properties and temperature stability of short cavity ridge waveguide lasers based on high-quality InAs quantum dots exhibiting a total modal gain of ~90 cm
-1
are reported. The 338-μm-long lasers show a threshold current of 20 mA at room temperature and an output powers of up to 36 mW. A maximum small signal modulation bandwidth of 15 GHz was obtained at 14 °C, which degrades to 13 GHz at 60 °C and 8 GHz at 80 °C. Digital modulation at 25 Gb/s between 15 °C and 50 °C was obtained with clear open eyes under constant drive conditions (dc and ac). The maximum data rates of 32 and 35 Gb/s were obtained for 338- and 230-μm-long lasers, respectively, at 14 °C.
24 citations
••
TL;DR: Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented and distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels were demonstrated over the entire temperature range.
Abstract: We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is observed. Consequently, two possible modes of operation are performed for a systematic device characterization over the entire temperature range. In the first mode, the signal wavelength is tuned to always match the peak gain wavelength while in the second mode, the signal wavelength is kept constant as the gain spectrum shifts with the temperature. Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented. Distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels, detuned by 2 nm, were demonstrated over the entire temperature range.
13 citations
••
TL;DR: In this paper, the charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) optical amplifiers were examined employing the multi-wavelength ultrafast pump-probe measurement technique.
Abstract: The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the continuous wave probe shows interesting dynamical processes during the initial 2-3 ps after the pump pulse, when carriers originating from two photon absorption contribute the least to the recovery. The effects of optical excitations and electrical bias levels on the recovery dynamics of the gain in energetically different QDs are quantified and discussed. The experimental observations are validated qualitatively using a comprehensive finite-difference time-domain model by recording the time evolution of the charge carriers in the QDs ensemble following the pulse.
11 citations
Cited by
More filters
•
TL;DR: The relationship between the Nobel prize for physics and semiconductor science and technology was explored and analyzed in this paper, which has practical importance for our understanding of the development of semiconductor S T and for predicting its future.
Abstract: Semiconductor science and technology (S T) is a very active branch in the field of natural science, and is also a typical example embodying the development of advanced S T. The Nobel prize for physics is a prize of the highest honour in the world, and there are certain relationships between this award and semiconductor S T. We explore and analyze these inherent relationships which have practical importance for our understanding of the development of semiconductor S T and for predicting its future.
194 citations
12 Dec 2003
TL;DR: This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters and suggests a potential for low-cost realization of regenerative transmission systems.
Abstract: This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters. A semiconductor optical amplifier having a gain of > 25 dB, noise figure of < 5 dB, and 3-dB saturation output power of > 20 dBm, over the record widest bandwidth of 90 nm among all kinds of optical amplifiers, and also having a penalty-free output power of 23 dBm, the record highest among all the semiconductor optical amplifiers, was realized by using quantum dots. By utilizing isotropically shaped quantum dots, the TM gain, which is absent in the standard Stranski-Krastanow QDs, has been drastically enhanced, and nearly polarization-insensitive SOAs have been realized for the first time. With an ultrafast gain response unique to quantum dots, an optical regenerator having receiver-sensitivity improving capability of 4 dB at a BER of 10-9 and operating speed of > 40 Gb/s has been successfully realized with an SOA chip. This performance achieved together with simplicity of structure suggests a potential for low-cost realization of regenerative transmission systems.
160 citations
••
TL;DR: In this article, the authors review the latest developments on telecommunication wavelength III-V lasers integrated on Si substrates, in terms of integration methods and laser performance, and propose a monolithic and heterogeneous integration of IIIV semiconductor components on Si platforms.
69 citations
••
TL;DR: A silicon-polymer hybrid modulator that maintains high data rates for long periods at high temperatures that could be used under such conditions, to reduce energy consumption is introduced.
Abstract: To reduce the ever-increasing energy consumption in datacenters, one of the effective approaches is to increase the ambient temperature, thus lowering the energy consumed in the cooling systems. However, this entails more stringent requirements for the reliability and durability of the optoelectronic components. Herein, we fabricate and demonstrate silicon-polymer hybrid modulators which support ultra-fast single-lane data rates up to 200 gigabits per second, and meanwhile feature excellent reliability with an exceptional signal fidelity retained at extremely-high ambient temperatures up to 110 °C and even after long-term exposure to high temperatures. This is achieved by taking advantage of the high electro-optic (EO) activities (in-device n3r33 = 1021 pm V−1), low dielectric constant, low propagation loss (α, 0.22 dB mm−1), and ultra-high glass transition temperature (Tg, 172 °C) of the developed side-chain EO polymers. The presented modulator simultaneously fulfils the requirements of bandwidth, EO efficiency, and thermal stability for EO modulators. It could provide ultra-fast and reliable interconnects for energy-hungry and harsh-environment applications such as datacentres, 5G/B5G, autonomous driving, and aviation systems, effectively addressing the energy consumption issue for the next-generation optical communication. Information and communication datacentres require a large amount of energy for their cooling systems, which could be decreased by working at higher temperatures. Here, the authors introduce a silicon-polymer hybrid modulator that maintains high data rates for long periods at high temperatures that could be used under such conditions, to reduce energy consumption.
68 citations