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S. Debbarma

Bio: S. Debbarma is an academic researcher. The author has contributed to research in topics: Quantum well & Semiconductor. The author has an hindex of 3, co-authored 5 publications receiving 20 citations.

Papers
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Journal ArticleDOI
TL;DR: It appears that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells.
Abstract: In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

6 citations


Cited by
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Book ChapterDOI
01 Jan 2020
TL;DR: In this article, the authors derived the quantum capacitance in quantum wire field effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane's matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation.
Abstract: This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.

4 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.
Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations

Book ChapterDOI
01 Jan 2022
TL;DR: In this paper, the carrier contribution to the 2nd and 3rd order elastic constants in opto-electronic materials in terahertz frequency by taking the bulk of various optoelectronic compounds was studied.
Abstract: In this chapter, we study the carrier contribution to the 2nd and 3rd order elastic constants (\(\phi_{1}\) and \(\phi_{2}\)) in opto-electronic materials in terahertz frequency by taking the bulk of various opto-electronic compounds. The influence of magnetic quantization, 1D quantization and 2D quantization has also been studied in this context. It appears that both \(\phi_{1}\) and \(\phi_{2}\) changes with wave length, intensity, electron statistics, alloy composition and nano thickness in different ways for all the opto-electronic compounds as considered here and the influence of quantization of band state is also being apparent from all the figures.

3 citations

Book ChapterDOI
01 Jan 2015
TL;DR: In this paper, an attempt is made to study the effective electron mass (EEM) in opto electronic materials within the framework of ''vec{k} \cdot \vec{p}'' formalism in the presence of intense light waves which changes the dispersion relation fundamentally.
Abstract: An attempt is made to study the effective electron mass (EEM) in opto electronic materials within the framework of \(\vec{k} \cdot \vec{p}\) formalism in the presence of intense light waves which changes the dispersion relation fundamentally. It is found taking n-type Mercury Cadmium Telluride and Indium Gallium Arsenide Phosphide lattice matched to Indium Phosphide that the EEM exhibits increasing dependency with wavelength as the later one changes from red to violet together with the fact with increasing light intensity the same mass is being enhanced with different numerical values. The variations of EEM with light intensity and wavelength reflect the direct signature of intense light waves on the band structured dependent properties of opto electronic materials. In the absence of external photo excitation all the results get transformed to the well-known expressions as given in the literature and thus confirming the compatibility test.

2 citations

Book ChapterDOI
01 Jan 2017
TL;DR: In this paper, the effect of strong photo excitation on the elastic constant (EC) in extremely degenerate nano-wires (NW) forming Gaussian band tails has been investigated by deriving a fundamental carrier statistics formula using NWs of Heavily Doped (HD) n-InSb, n-INAs, Hg1−xCdxTe and In 1−xGaxAsyP1−y y lattice matched to InP as examples.
Abstract: Effect of strong photo excitation on the elastic constant (EC) in extremely degenerate Nano-Wires (NW) forming Gaussian band tails has been investigated by deriving a fundamental carrier statistics formula using NWs of Heavily Doped (HD) n-InSb, n-InAs, Hg1−xCdxTe and In1−xGaxAsyP1−y y lattice matched to InP as examples. We observe that ΔC44 becomes invariant of the film thickness under the condition of relatively low values of the quantum thickness, indicating a very sharp fall at a particular value of the nano thickness manifesting the quantum size effect, in EC. The EC increases with decreasing light intensity, wavelength and alloy composition where the rate of change depends on the values of the band constants respectively. The EC can be experimentally determined by using the corresponding the experimental values of the thermo electric power.