IEEE International Solid-State Circuits Conference

A fully-integrated FMCW radar system for automotive applications operating at 77 GHz has been proposed. Utilizing a fractional- synthesizer as the FMCW generator, the transmitter linearly modulates the carrier frequency across a range of 700 MHz. The receiver together with an external baseband processor detects the distance and relative speed by conducting an FFT-based algorithm. Millimeter-wave PA and LNA are incorporated on chip, providing sufficient gain, bandwidth, and sensitivity. Fabricated in 65-nm CMOS technology, this prototype provides a maximum detectable distance of 106 meters for a mid-size car while consuming 243 mW from a 1.2-V supply.

A Fully-Integrated 77-GHz FMCW Radar Transceiver in 65-nm CMOS Technology

An ultra-wideband 3.1-10.6-GHz low-noise amplifier employing a broadband noise-canceling technique is presented. By using the proposed circuit and design methodology, the noise from the matching device is greatly suppressed over the desired UWB band, while the noise from other devices performing noise cancellation is minimized by the systematic approach. Fabricated in a 0.18-mum CMOS process, the IC prototype achieves a power gain of 9.7 dB over a -3 dB bandwidth of 1.2-11.9-GHz and a noise figure of 4.5-5.1 dB in the entire UWB band. It consumes 20 mW from a 1.8-V supply and occupies an area of only 0.59 mm2

A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers

Inductive-peaking-based bandwidth extension techniques for CMOS amplifiers in wireless and wireline applications are presented. To overcome the conventional limits on bandwidth extension ratios, these techniques augment inductive peaking using capacitive splitting and magnetic coupling. It is shown that a critical design constraint for optimum bandwidth extension is the ratio of the drain capacitance of the driver transistor to the load capacitance. This, in turn, recommends the use of different techniques for different capacitance ratios. Prototype wideband amplifiers in 0.18-mum CMOS are presented that achieve a measured bandwidth extension ratio up to 4.1 and simultaneously maintain high gain (>12 dB) in a single stage. Even higher enhancement ratios are shown through the introduction of a modified series-peaking technique combined with staggering techniques. Ultra-wideband low-noise amplifiers in 0.18-mum CMOS are presented that exhibit bandwidth extension ratios up to 4.9

Bandwidth Extension Techniques for CMOS Amplifiers

A limiting amplifier incorporates active feedback, inductive peaking, and negative Miller capacitance to achieve a voltage gain of 50 dB, a bandwidth of 9.4 GHz, and a sensitivity of 4.6 mV/sub pp/ for a bit-error rate of 10/sup -12/ while consuming 150 mW. A driver employs T-coil peaking and negative impedance conversion to achieve operation at 10 Gb/s while delivering a current of 100 mA to 25-/spl Omega/ lasers or a voltage swing of 2 V/sub pp/ to 50-/spl Omega/ modulators with a power dissipation of 675 mW. Fabricated in 0.18-/spl mu/m CMOS technology, both prototypes operate with a 1.8-V supply.

/pdf/10-gb-s-limiting-amplifier-and-laser-modulator-driver-in-0-2im89iwg2y.pdf

10-Gb/s limiting amplifier and laser/modulator driver in 0.18-/spl mu/m CMOS technology

A broadband technique using monolithic T-coils is applied to electrostatic discharge (ESD) structures for both input and output pads. Fabricated in 0.18-/spl mu/m CMOS technology, the prototypes achieve operation at 10 Gb/s while providing a return loss of -20 dB at 10 GHz. The human-body model tolerance is 1000 V for the input structure and 800-900 V for the output structure.

/pdf/broadband-esd-protection-circuits-in-cmos-technology-w4mn838pa1.pdf

Broadband ESD protection circuits in CMOS technology

A triple-resonance LC network increases the bandwidth of cascaded differential pairs by a factor of 2/spl radic/3, yielding a 40-Gb/s CMOS amplifier with a gain of 15 dB and a power dissipation of 190 mW from a 2.2-V supply. An ESD protection circuit employs negative capacitance along with T-coils and pn junctions to operate at 40 Gb/s while tolerating 700-800 V.

/pdf/40-gb-s-amplifier-and-esd-protection-circuit-in-0-18-spl-mu-2jdpxs39qr.pdf

S. Galal

Papers

10-Gb/s limiting amplifier and laser/modulator driver in 0.18-/spl mu/m CMOS technology

Broadband ESD protection circuits in CMOS technology

40-Gb/s amplifier and ESD protection circuit in 0.18-/spl mu/m CMOS technology