S. H. Mohamed

Bio: S. H. Mohamed is an academic researcher from Sohag University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 23, co-authored 78 publications receiving 1716 citations. Previous affiliations of S. H. Mohamed include Qassim University & South Valley University.

Optical and calorimetric studies of Ge-Sb-Se glasses

Abstract: Optical properties of amorphous Ge x Sb 40 − x Se 60 ( x =225, 25, 275, 30 and 325 at%) thin films prepared by electron beam evaporation have been measured in the visible and near-infrared spectral region The variations of the electronic energy gap ( E g ) with composition are discussed on the basis of both the overall mean bond energy and the topological model based on the structural dimensionality considerations A pronounced peculiarity (maximum or minimum) appeared at around the same value of the average coordination number ( Z )=265 for all the compositional dependencies of electronic energy gap, high frequency dielectric constant, optical relaxation time and the dispersion parameters, is attributed to a topological phase transition from two-dimensional (2D) layer type to three-dimensional (3D) cross-linked network structures in the present glassy thin films This confirms the suitability of structural topological model to explain the compositional dependencies of the physical parameters, not only for bulk glasses but also for thin films evaporated from them These results are supported by volumetric and the calorimetric measurements

Photocatalytic, optical and electrical properties of copper-doped zinc sulfide thin films

Abstract: Thin films of ZnS?:?Cu nanoparticles were prepared by electron beam evaporation on glass substrates. The Cu content was varied from 0 to 9?at%. XRD examination of the as-prepared films revealed the presence of polycrystalline hexagonal ZnS with preferred orientation depending on the Cu content. As annealing was carried out, grain growth was observed and a new orthorhombic copper sulfate phase emerged. The photocatalytic behaviour of ZnS?:?Cu was mainly evaluated by measuring the decomposition of methylene blue. The photocatalytic activities were found to decrease with increasing Cu content as well as with increasing annealing temperature. The optical transmittance and reflectance measurements were performed using a spectrophotometer. The spectral transmittance was decreased and the band gap energy was shifted from 3.45 to 3.20?eV with increasing Cu content. The refractive index was determined from transmittance using the Swanepoel method. The refractive index was found to depend on Cu content as well as annealing temperature. A strong decrease in room temperature resistivity was obtained with increasing Cu content. The obtained results are interesting and may find applications in photodegradation of pollutants and future display devices.

High power pulsed magnetron sputtering: A review on scientific and engineering state of the art

Abstract: High power pulsed magnetron sputtering (HPPMS) is an emerging technology that has gained substantial interest among academics and industrials alike. HPPMS, also known as HIPIMS (high power impulse ...

Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system

Abstract: One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near-edge region can be fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots). While the technique is powerful and simple, the accuracy of the fitted band-gap result is seldom stated or known. We tackle this question by refitting a large number of Tauc plots from the literature and look for trends. Nominally pure zinc oxide (ZnO) was chosen as a material with limited intrinsic deviation from stoichiometry and which has been widely studied. Our examination of the band gap values and their distribution leads to a discussion of some experimental factors that can bias the data and lead to either smaller or larger apparent values than would be expected. Finally, an easily evaluated figure-of-merit is defined that may help guide more accurate Tauc fitting. For samples with relatively sharper Tauc plot shapes, the population yields Eg(ZnO) as 3.276 ± 0.033 eV, in good agreement with data for single crystalline material.

Growth of aromatic molecules on solid substrates for applications in organic electronics

Abstract: The growth of molecular adlayers on solid substrates is reviewed with aspecial emphasis on molecules of relevance for organic electronics. In particular,we will consider planar molecules with extended π-systems, namely acenes (anthracene, tetracene, pentacene), perylene, coronenes, diindenoperylene, 3,4,9,10-perylene-tetracarboxylicacid-dianhydride, poly-phenylenes, oligothiophenes, and phthalocyanines. Special consideration is given to the importance of the formation of ordered molecular overlayers, which are compared with the structure of the corresponding bulk crystals. Whenever possible, aspects relevant for device fabrication (morphology of deposited films, mobilities of charge carriers) will be addressed.

Development of hafnium based high-k materials—A review

Abstract: The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor field effect transistor is considered one of the most dramatic advances in materials science since the invention of silicon based transistors. Metal oxides are superior to SiO 2 in terms of their higher dielectric constants that enable the required continuous down-scaling of the electrical thickness of the dielectric layer while providing a physically thicker layer to suppress the quantum mechanical tunneling through the dielectric layer. Over the last decade, hafnium based materials have emerged as the designated dielectrics for future generation of nano-electronics with a gate length less than 45 nm, though there exists no consensus on the exact composition of these materials, as evolving device architectures dictate different considerations when optimizing a gate dielectric material. In addition, the implementation of a non-silicon based gate dielectric means a paradigm shift from diffusion based thermal processes to atomic layer deposition processes. In this report, we review how HfO 2 emerges from all likely candidates to become the new gold standard in the microelectronics industry, its different phases, reported electrical properties, and materials processing techniques. Then we use specific examples to discuss the evolution in designing hafnium based materials, from binary to complex oxides and to non-oxide forms as gate dielectric, metal gates and diffusion barriers. To address the impact of these hafnium based materials, their interfaces with silicon as well as a variety of semiconductors are discussed. Finally, the integration issues are highlighted, including carrier scattering, interface state passivation, phonon engineering, and nano-scale patterning, which are essential to realize future generations of devices using hafnium-based high- k materials.