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Author

S. K. Bag

Bio: S. K. Bag is an academic researcher from VIT University. The author has contributed to research in topics: Etching (microfabrication) & Surface micromachining. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.

Papers
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Book ChapterDOI
S. K. Bag1
01 Jan 2006

2 citations


Cited by
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Journal ArticleDOI
TL;DR: A review on the research and developmental aspects of Microelectromechanical Systems (MEMS), which can be used in a variety of industrial as well as consumer product applications where IC-based technology fails.
Abstract: Design for miniaturisation represents a broad research topic with applications in fundamental physics, chemistry, martial science, computing methods, ultra-precision engineering, fabrication technology and micromachining based on the principles, characterisation, modelling, simulation and state-of-the-art technology. This paper presents a review on the research and developmental aspects of Microelectromechanical Systems (MEMS). MEMS is relatively a recent development which can be used in a variety of industrial as well as consumer product applications where IC-based technology fails. The review will enable the readers to understand the underlying technology, philosophy, concepts, ideas and principles including micromanufacturing, lithography, bulk and surface micromachining, microsensors, microactuators, Microopto Electromechanical Systems (MOEMS), RF MEMS, Nanoelectro Mechanical Systems (NEMS), microfluidics and BioMEMS. Aspects of microsystems in terms of design process, practice and techniques are presented.

20 citations

Patent
B. Peethala1, Spyridon Skordas1, Da Song1, Allan Upham1, Kevin R. Winstel1 
10 Jun 2014
TL;DR: In this paper, a method of preparing an etch solution and thinning semiconductor wafers using the solution is proposed, which includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio.
Abstract: A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×10 19 atoms/cm 3 ; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.

3 citations