S.K. Roy

Bio: S.K. Roy is an academic researcher from University of Calcutta. The author has contributed to research in topics: IMPATT diode & Terahertz radiation. The author has an hindex of 9, co-authored 26 publications receiving 297 citations.

GaN IMPATT diode: a photo-sensitive high power terahertz source

Abstract: The prospects of wurtzite phase single-drift-region (SDR), flat and single-low-high-low (SLHL) type GaN IMPATT devices as terahertz sources are studied through a simulation experiment. The study indicates that GaN IMPATT diodes are capable of generating high RF power (at least 2.5 W) at around 1.45 THz with high efficiency (17–20%). The superior electronic properties of GaN make this a promising candidate for IMPATT operation in the THz regime, unapproachable by conventional Si, GaAs and InP based IMPATT diodes. The effect of parasitic series resistance on the THz performance of the device is further simulated. It is interesting to note that the presence of a charge bump in a flatly doped SDR structure reduces the value of parasitic series resistance by 22%. The effects of photo- illumination on the devices are also investigated using a modified double iterative simulation technique. Under photo-illumination (i) the negative conductance and (ii) the negative resistance of the devices (both flat and SLHL) decrease, while the frequency of operation and the device quality factor shift upwards. However, the upward shift in operating frequency is found to be more (~16 GHz) in the case of the SLHL SDR IMPATT device. The study indicates that GaN IMPATT is a promising opto-sensitive high power THz source.

Photosensitivity Analysis of Gallium Nitride and Silicon Carbide Terahertz IMPATT Oscillators: Comparison of Theoretical Reliability and Study on Experimental Feasibility

Abstract: Reliability of terahertz-frequency (~1.0 THz) characteristics of wide-bandgap (WBG) wurtzite (Wz)-GaN- and 4H-SiC-based p++nn++-type single-drift-region (SDR) impact avalanche transit time (IMPATT) devices (normal and photoilluminated) is compared through a simulation scheme. The simulation experiment reveals that an RF power density of 3.37 times 1011 W middotm-2 (efficiency of 18.2%) at around 1.126 THz may be realized from the optimized unilluminated GaN IMPATT device, whereas the unilluminated 4H-SiC IMPATT device is expected to generate an RF power density of 1.35 times 1011 W middotm-2 (efficiency of 9%) at 1.05 THz. However, the parasitic series resistance reduces the maximum exploitable power density from the terahertz devices. Under optical illumination, additional photogenerated carriers are created in the devices, and these carriers change the admittance and negative resistance properties of the terahertz IMPATT diodes. The performance modulation of the terahertz devices is simulated, and the results are compared in this paper. Under external radiation, the operating frequencies of the GaN- and SiC-based diodes are found to shift upward by 6.0 and 40.0 GHz, respectively, with degradation of maximum output-power density level and device negative resistance. The extensive simulation experiments establish that, although the photosensitivity of the 4H-SiC-based IMPATT device is better than its GaN counterpart, the overall terahertz performance of the unilluminated GaN IMPATT device is far better than the 4H-SiC-based device, particularly in terms of output power and efficiency. The simulation results and the proposed experimental methodology presented here can be used for realizing optically tuned WBG IMPATT oscillators for terahertz communication.

A small signal analysis of an impatt device having two avalanche layers interspaced by a drift layer

Abstract: A small signal analysis of an IMPATT device (p−n−i−p−n structure) having two avalanche layers interspaced by a drift layer is carried out. When the widths of the two avalanche layers are different the device exhibits discrete negative conductance frequency bands separated by positive conductance frequency bands. Oscillations are expected to occur more favourably in the lowest frequency band where the maximum and minimum values of magnitudes of negative conductance and negative Q occur, respectively. When the two avalanche layer widths are equal, the device impedance is a high Q-reactance whose magnitude depends on the d.c. current.

Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Abstract: The dynamic performance of wide-bandgap 4H-SiC based double drift region () IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power ( ) terahertz source. The parasitic series resistance in the device is found to reduce the RF power output by 10.7%. The effects of external radiation on the simulated diode are also studied. It is found that (i) the negative conductance and (ii) the negative resistance of the diode decrease, while, the frequency of operation and the quality factor shift upward under photoillumination. Holes in 4H-SiC based IMPATT are found to dominate the modulation activities. The inequality in the magnitude of electron and hole ionization rates in the semiconductors may be correlated with these findings.

Invited Review Article: Current State of Research on Biological Effects of Terahertz Radiation

Abstract: Terahertz (THz) imaging and sensing technologies are increasingly being used in a host of medical, military, and security applications. For example, THz systems are now being tested at international airports for security screening purposes, at major medical centers for cancer and burn diagnosis, and at border patrol checkpoints for identification of concealed explosives, drugs, and weapons. Recent advances in THz applications have stimulated renewed interest regarding the biological effects associated with this frequency range. Biological effects studies are a valuable type of basic science research because they serve to enhance our fundamental understanding of the mechanisms that govern THz interactions with biological systems. Such studies are also important because they often times lay the foundation for the development of future applications. In addition, from a practical standpoint, THz biological effects research is also necessary for accurate health hazard evaluation, the development of empirically-based safety standards, and for the safe use of THz systems. Given the importance and timeliness of THz bioeffects data, the purpose of this review is twofold. First, to provide readers with a common reference, which contains the necessary background concepts in biophysics and THz technology, that are required to both conduct and evaluate THz biological research. Second, to provide a critical review of the scientific literature.

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Abstract: In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift–diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

Rectangular Microstirp Patch Antenna Design at THz Frequency for Short Distance Wireless Communication Systems

Abstract: In this paper, we have presented the simulation results of a rectangular microstrip patch antenna at terahertz (THz) frequency ranging from 0.7 to 0.85 THz. THz electromagnetic wave can permit more densely packed communication links with increased security of communication transmission. The simulated results such as gain, radiation efficiency and 10 dB impedance bandwidth of rectangular microstrip patch antenna at THz frequencies without shorting post configuration are 3.497 dB, 55.71% and 17.76%, respectively, whereas with shorting post configuration, corresponding parameters are 3.502 dB, 55.88% and 17.27%. The simulation has been performed by using CST Microwave Studio, which is a commercially available electromagnetic simulator based on the method of finite difference time domain technique.

In vitro investigation of the biological effects associated with human dermal fibroblasts exposed to 2.52 THz radiation.

Abstract: Background Terahertz (THz) radiation sources are increasingly being used in military, defense, and medical applications. However, the biological effects associated with this type of radiation are not well characterized. In this study, we evaluated the cellular and molecular response of human dermal fibroblasts exposed to THz radiation. Methods In vitro exposures were performed in a temperature-controlled chamber using a molecular gas THz laser (2.52 THz, 84.8 mW cm−2, durations: 5, 10, 20, 40, or 80 minutes). Both computational and empirical dosimetric techniques were conducted using finite-difference time-domain (FDTD) modeling approaches, infrared cameras, and thermocouples. Cellular viability was assessed using conventional MTT assays. In addition, the transcriptional activation of protein and DNA sensing genes were evaluated using qPCR. Comparable analyses were also conducted for hyperthermic and genotoxic positive controls. Results We found that cellular temperatures increased by 3°C during all THz exposures. We also found that for each exposure duration tested, the THz and hyperthermic exposure groups exhibited equivalent levels of cell survival (≥90%) and heat shock protein expression (∼3.5-fold increases). In addition, the expression of DNA sensing and repair genes was unchanged in both groups; however, appreciable increases were observed in the genotoxic controls. Conclusions Human dermal fibroblasts exhibit comparable cellular and molecular effects when exposed to THz radiation and hyperthermic stress. These findings suggest that radiation at 2.52 THz generates primarily thermal effects in mammalian cells. Therefore, we conclude that THz-induced bioeffects may be accurately predicted with conventional thermal damage models. Lasers Surg. Med. 42:152–163, 2011 © 2010 Wiley-Liss, Inc.