Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Semiconducting nanowires have the potential to act as highly sensitive sensors for the detection of pathogenic microorganisms, without the need for a label on the pathogen. Practical miniature sensors would have applications in diagnostics, homeland security and basic research. Current technologies have not been widely adopted for various reasons, including the difficulty of integrating nanoscale devices into practical sensors. Now a team spanning five departments at Yale has developed a new approach to the problem. In a state-of-the-art (CMOS-compatible) system they create miniature, ultra-sensitive sensors that can detect specific unlabelled antibodies at concentrations below 100 femtomolar and are able to monitor the cellular immune response in 'real-time'. A new approach that uses complementary metal oxide semiconductor field effect transistor compatible technology is reported, and demonstrates the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response. Semiconducting nanowires have the potential to function as highly sensitive and selective sensors for the label-free detection of low concentrations of pathogenic microorganisms1,2,3,4,5,6,7,8,9,10. Successful solution-phase nanowire sensing has been demonstrated for ions3, small molecules4, proteins5,6, DNA7 and viruses8; however, ‘bottom-up’ nanowires (or similarly configured carbon nanotubes11) used for these demonstrations require hybrid fabrication schemes12,13, which result in severe integration issues that have hindered widespread application. Alternative ‘top-down’ fabrication methods of nanowire-like devices9,10,14,15,16,17 produce disappointing performance because of process-induced material and device degradation. Here we report an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrate the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response. This approach eliminates the need for hybrid methods and enables system-scale integration of these sensors with signal processing and information systems. Additionally, the ability to monitor antibody binding and sense the cellular immune response in real time with readily available technology should facilitate widespread diagnostic applications.

/pdf/label-free-immunodetection-with-cmos-compatible-39gztg5mmq.pdf

Label-free immunodetection with CMOS-compatible semiconducting nanowires

In this paper we review recent progress in materials, fabrication processes, device designs, and applications related to organic thin-film transistors (OTFTs), with an emphasis on papers published during the last three years. Some earlier papers that played an important role in shaping the OTFT field are included, and a number of previously published review papers that cover that early period more completely are referenced. We also review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.

Organic thin-film transistors: a review of recent advances

https://samson.chem.umass.edu/honsem/OrganicPV2004.pdf

Organic photovoltaics: technology and market

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.

S. M. Sze

Papers

Physics of semiconductor devices /2nd edition/