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S. N. Grigorov

Bio: S. N. Grigorov is an academic researcher from National Technical University. The author has contributed to research in topics: Thermoelectric effect & Seebeck coefficient. The author has an hindex of 6, co-authored 11 publications receiving 226 citations.

Papers
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Journal ArticleDOI
TL;DR: In PbSe epitaxial thin films grown by thermal evaporation on KCl(001) substrates and covered with an EuS protective layer, oscillatory dependences of the galvanomagnetic and thermoelectric properties (electrical conductivity σ, the Hall coefficient RH, charge carrier mobility μ, and the Seebeck coefficient S) were observed at room temperature as mentioned in this paper.
Abstract: In PbSe epitaxial thin films grown by thermal evaporation on KCl(001) substrates and covered with an EuS protective layer, oscillatory dependences of the galvanomagnetic and thermoelectric properties (electrical conductivity σ, the Hall coefficient RH, charge carrier mobility μ, and the Seebeck coefficient S) on the PbSe layer thickness d (3

70 citations

Journal ArticleDOI
TL;DR: In this paper, the authors attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.
Abstract: Oscillatory thickness dependences of the electrical conductivity, Hall coefficient, charge carrier mobility, and Seebeck coefficient were obtained at room temperature for n-type thin Bi films (d=3–300 nm) fabricated by the thermal evaporation of a bismuth crystal in a vacuum and deposition on mica substrates at 380 K. We attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.

62 citations

Journal ArticleDOI
TL;DR: In this paper, the dependence of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2-200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature.
Abstract: Oscillatory behaviour was detected in the dependences of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2–200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature. The non-monotonic character of these dependences is attributed to quantum size effects, which manifest themselves in PbTe QWs at sufficiently small values of d. The positions of the extrema in the thickness dependences of the transport properties shift with changing electron concentration in PbTe QWs.

44 citations

Journal ArticleDOI
TL;DR: In this paper, the dependence of the elastic stress in a growing layer (either PbTe or SnTe) on the layer thickness and the critical thickness are in good agreement with those calculated theoretically.

24 citations

Journal ArticleDOI
TL;DR: In this article, the effect of oxidation at room temperature on the thermoelectric properties of PbSe/KCl (001) thin films prepared by thermal evaporation was investigated.
Abstract: The effect of oxidation at room temperature on the thermoelectric properties of PbSe/KCl (001) thin films prepared by thermal evaporation was investigated. The dependences of the electrical conductivity, the Hall coefficient, charge carrier mobility, and thermopower on the PbSe layer thickness (d=4–200 nm) were obtained. An inversion of the sign of the dominant carriers from n to p at d∼80 nm was observed under decreasing d. The d dependences of the thermoelectric properties were interpreted, taking into consideration the oxidation processes at the film/air interface within the framework of models considering both n-type and p-type carriers.

20 citations


Cited by
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Journal ArticleDOI
TL;DR: It is theoretically predicted that two-dimensional bismuth will show the quantum spin-Hall effect, both by calculating the helical edge states, and by showing the nontriviality of the Z2 topological number.
Abstract: We show that the spin-Hall conductivity in insulators is related to a magnetic susceptibility representing the strength of the spin-orbit coupling. We use this relationship as a guiding principle to search real materials showing quantum spin-Hall effect. As a result, we theoretically predict that two-dimensional bismuth will show the quantum spin-Hall effect, both by calculating the helical edge states, and by showing the nontriviality of the ${Z}_{2}$ topological number, and propose possible experiments.

525 citations

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TL;DR: In this paper, the physical and chemical properties of various thermoelectric materials are reviewed and strategies for improving the performance of materials are proposed, along with an insight into semiconductor physics.

499 citations

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TL;DR: In this article, the authors introduce the theory behind thermoelectric materials and details the predicted and demonstrated enhancements of ZT in nanoscale and nanostructured thermocomponent materials, including thin films and superlattices, nanowires and nanotubes.
Abstract: Thermoelectric materials can be used for solid state power generation and heating/cooling applications. The figure of merit of thermoelectric materials, ZT, which determines their efficiency in a thermoelectric device, remains low for most conventional bulk materials. Nanoscale and nanostructured thermoelectric materials are promising for increasing ZT relative to the bulk. This review introduces the theory behind thermoelectric materials and details the predicted and demonstrated enhancements of ZT in nanoscale and nanostructured thermoelectric materials. We discuss thin films and superlattices, nanowires and nanotubes, and nanocomposites, providing a ZT comparison among various families of nanocomposite materials. We provide some perspectives regarding the origin of enhanced ZT in nanoscale and nanostructured materials and suggest some promising and fruitful research directions for achieving high ZT materials for practical applications.

346 citations

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TL;DR: It is demonstrated that thermopower of PbSe nanocrystal solids can be tailored by charge-transfer doping and increases monotonically as the Nanocrystal size decreases due to changes in carrier concentration.
Abstract: We examine the effect of strong three-dimensional quantum confinement on the thermopower and electrical conductivity of PbSe nanocrystal superlattices. We show that for comparable carrier concentrations PbSe nanocrystal superlattices exhibit a substantial thermopower enhancement of several hundred microvolts per Kelvin relative to bulk PbSe. We also find that thermopower increases monotonically as the nanocrystal size decreases due to changes in carrier concentration. Lastly, we demonstrate that thermopower of PbSe nanocrystal solids can be tailored by charge-transfer doping.

262 citations

Journal ArticleDOI
01 Apr 2010-ACS Nano
TL;DR: The superior hole mobilities and oxidation resistance of formic- and acetic-treated QD solids may prove useful in constructing efficient, stable QD photovoltaic devices.
Abstract: We show that ligand exchange with short-chain carboxylic acids (formic, acetic, and oxalic acid) can quantitatively remove oleic acid from the surface of PbSe and PbS quantum dot (QD) films to yield p-type, carboxylate-capped QD solids with field-effect hole mobilities in the range of 10−4−10−1 cm2 V−1 s−1. For a given chemical treatment, PbSe devices have 10-fold higher mobilities than PbS devices because of stronger electronic coupling among the PbSe QDs and possibly a lower density of surface traps. Long-term optical and electrical measurements (i) show that carboxylate-capped PbSe QD films oxidize much more gradually in air than do thiol-capped PbSe films and (ii) quantify the slower and less extensive oxidation of PbS relative to PbSe QDs. We find that whereas the hole mobility of thiol-capped samples decreases continuously with time in air, the mobility of carboxylate-capped films first increases by an order of magnitude over several days before slowly decreasing over weeks. This behavior is a conse...

251 citations