Author
S. Pawel
Bio: S. Pawel is an academic researcher. The author has contributed to research in topics: Printed circuit board & Gate driver. The author has an hindex of 1, co-authored 1 publications receiving 10 citations.
Topics: Printed circuit board, Gate driver
Papers
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18 May 2008
TL;DR: In this article, the authors describe the development and implementation of gate drive ICs that rely exclusively on external coreless transformers (ECT) for both signal and continuous power transfer.
Abstract: This paper describes development and implementation of gate drive ICs that rely exclusively on external coreless transformers. Both, signal and continuous power are transferred via coreless transformers. The newly developed "double pulse" signal transmission scheme facilitates save switching under voltage transients higher than 95 V/ns. Reliability of the planar insulation on the printed circuit board is found to be as good as for conventional ring core molding, or better. Dedicated layer buildup and material selection prevents insulation failure due to formation of conductive anodic filaments.
10 citations
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15 Jun 2014
TL;DR: In this article, a monolithic solution based on integrated coreless transformer (ICT) for galvanic isolation and power transfer application is demonstrated, and the experimental results of this gate driver have validated the use of isolated signal and energy transfer by on-chip transformer for both high side and low side applications.
Abstract: In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic isolation and power transfer application is demonstrated. First, the characterization of ICTs is investigated by a set of five devices with stacked topology but different geometrical parameters fabricated in a 0.35 μm H35B4M3 CMOS technology from AMS. Second, the behavior of these ICTs is also predicted by electromagnetic (EM) simulation in Ansoft HFSS and analyzed by their equivalent electrical model. The measured results have shown a peak of voltage gain of -3 dB with the design of 300 μm of diameter while charging with the input capacitance of 900 fF of the demodulated circuit. Finally, an integrated gate driver is also fabricated using the optimal design of ICT, achieving a compact area of 0.72 mm 2 and offers 1.8 kV of isolation. The experimental results of this gate driver have validated the use of isolated signal and energy transfer by on-chip transformer for both high side and low side applications.
16 citations
23 May 2011
TL;DR: In this paper, an isolation technique based on a coreless transformer integrated in a CMOS silicon die together with the gate driver and other required functions is presented, as the control signal must be modulated at a high frequency through the coreless transform.
Abstract: With the development of multi-level, multiphase or network converters requiring the implementation of numerous distinct power transistor gate drivers, the control signal insulation is becoming more and more important in power converters. This paper presents an isolation technique based on a coreless transformer integrated in a CMOS silicon die together with the gate driver and other required functions. The associated demodulation circuit will also be presented, as the control signal must be modulated at a high frequency through the coreless transformer. The chosen design methodology will be explained and experimental results will be shown in order to validate the functionality.
13 citations
TL;DR: In this paper, two ferrite cores are added to improve the magnetic coupling effect and thus decrease the impulse current maximum value in the primary side, which is achieved with a printed circuit board and classical copper windings.
Abstract: In this study, a signal impulse transmission function is investigated which provides high insulation voltage capabilities for IGBT drivers devices. This electrical insulation is achieved with a printed circuit board (PCB) and classical copper windings. Two ferrite cores are added to improve the magnetic coupling effect and thus decrease the impulse current maximum value in the primary side. The electronic circuit involves a series resonant topology in the primary side and a parallel one in the secondary side. The classical electronic components lead potentially to cost-effective solutions. However, so as to optimise the proposed system, a design methodology based on virtual prototyping tools is carried out. The simulation results presented on a Pareto front are analysed with the help of propagation delay and average power consumption. Moreover, measurement results with a 1.6 mm PCB are compared with simulation ones. Finally, the proposed solution and the methodology design are clearly accurate and suitable for power electronic designers and especially for IGBT driver devices designers.
11 citations
13 Nov 2014
TL;DR: In this paper, a planar resonant couplers were used to reduce the unwanted leakage that prevents conventional wireless systems from being applied inside the equipment, which restricted propagation loss to -0.9 dB and return loss to −10.0 dB in a wide frequency range of 2.2-2.78 GHz.
Abstract: An insulated signal transmission system using planar resonant coupling technology has been developed for providing driving signal transmission to control power electronic equipment. The resonant coupling can reduce the unwanted leakage that prevents conventional wireless systems from being applied inside the equipment. Using planar resonant couplers, the system restricted propagation loss to -0.9 dB and return loss to -10.0 dB in a wide frequency range of 2.2-2.78 GHz. Additionally, the couplers showed highly reliable parasitic capacitance characteristics and partial discharge characteristics. The developed system demonstrated switching operation of 3.3 kV-1200 A insulated-gate bipolar transistors (IGBTs) without disturbances between the highpower switching IGBTs and the RF transceivers.
8 citations
TL;DR: In this article, a communication function is studied to be integrated into the new generations of drivers for SiC mosfet, and the theoretical development of a solution called CAN-ISO is detailed and experimental results under a high peak voltage of 2 kV and a high dv/dt equal to
Abstract: The control of mosfet or IGBT transistors is carried out by a dedicated circuit called « driver », which is located as close as possible to the power module. It transmits switch- on and switch- off orders coming from the control unit and ensures the integrity of the component through safety functions. It also provides a galvanic isolation essential to guarantee the effective functioning of the system and the users’ safety. Switching times of SiC mosfet are faster than Si IGBT, and SiC mosfet can also work under a greater dc voltage than Si mosfet . This involves the presence of higher dv/dt in the converter. In this paper, a communication function is studied to be integrated into the new generations of drivers for SiC mosfet . The interest of the implementation of a communication system in a driver is presented. Currently available solutions on the market to provide isolation to communication channels are debated. The theoretical development of a solution called « CAN-ISO » is detailed and experimental results under a high peak voltage of 2 kV and a high dv/dt equal to ${\text{125}}\;{\text{kV}}/{\mu}{\text{s}}$ are presented.
7 citations