S.R. Elliott

TL;DR: In this article, a comprehensive survey is given of the experimental a.c. data for two types of amorphous semiconductor, namely chalcogenide and pnictide materials, and it is concluded that the behavior at intermediate to high temperatures is well accounted for by the correlated-barrier-hopping model, whereas the low-temperature behaviour is probably due to atomic tunnelling.

TL;DR: In this article, the results of experimental investigations of the photodoping of amorphous chalcogenides by metals, and in particular by silver, are reviewed, and the results in the literature are analysed, giving answers to such fundamental questions as the following: where is the actinic light which is efficient for photodissolution absorbed? Which is the diffusion-limiting step? What is the state of the diffusing species (neutral atoms or ions)?

TL;DR: In this article, a general mechanism is proposed for the production of reversible photo-induced changes in chalcogenide glasses in terms of the scission of bonds, both inter-molecular and intra-molescular.

TL;DR: Etude par spectrometrie EXAFS de l'environnement structural du bismuth incorpore a des verres de chalcogenure Ge−S and Ge−Se propose un mecanisme pour la transition p-n due a l'effet dopant.

TL;DR: Extended X-ray absorption fine-structure spectroscopy (EXAFS) measurements have been performed on amorphous arsenic sulphide, in both bulk-glass and thin-film forms, in order to probe the changes in local order accompanying the photostructural changes which occur in such materials as discussed by the authors.